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Sputtering target materials

The sputtering process shown in Figure 19.1, utilizes the phenomena associated with a low-pressure gas discharge. The system comprises an anode and cathode generally the low-pressure chamber is earthed and forms an infinite area anode the small cathode surface is the target material from which gas ion-etching occurs, resulting in condensation of the material onto workpieces within the vacuum chamber. [Pg.314]

As the source of material (sputtering target) is a solid, a variety of electrode configurations can be used e.g., depositing material downward, upward or sideways. It is possible to electrically bias workpieces being coated. This can encourage a level of ion bombardment that can modify the surface and structure of a coating. [Pg.315]


See other pages where Sputtering target materials is mentioned: [Pg.192]    [Pg.259]    [Pg.479]    [Pg.266]    [Pg.295]    [Pg.192]    [Pg.259]    [Pg.479]    [Pg.266]    [Pg.295]    [Pg.315]    [Pg.395]    [Pg.396]    [Pg.397]    [Pg.518]    [Pg.518]    [Pg.519]    [Pg.519]    [Pg.520]    [Pg.520]    [Pg.211]    [Pg.477]    [Pg.348]    [Pg.211]    [Pg.19]    [Pg.315]    [Pg.317]    [Pg.595]    [Pg.148]    [Pg.315]    [Pg.317]    [Pg.211]    [Pg.134]    [Pg.80]    [Pg.99]    [Pg.518]    [Pg.519]    [Pg.519]    [Pg.519]    [Pg.520]    [Pg.520]    [Pg.344]    [Pg.395]    [Pg.396]    [Pg.397]    [Pg.126]    [Pg.125]    [Pg.543]    [Pg.76]    [Pg.84]    [Pg.388]    [Pg.389]    [Pg.586]   
See also in sourсe #XX -- [ Pg.266 ]




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