Conducting target sputtering

Diode sputtering the simplest but requires an electrically conductive target it has low energy efficiency and electron bombardment may cause significant damage of the substrate. 

The results of a GDMS analysis of high-purity TiW are summarized in Table 4. High-purity TiW is very commonly used as the metallization to provide the conducting links in the construction of semiconductor devices. The metallization is commonly deposited by sputtering from a high-purity alloy target onto the sub-... 

Fig. 4.12. Valence band maximum binding energies of magnetron sputtered ZnO and ZnO Al films in dependence on the oxygen content in the sputter gas at room temperature (left) and in dependence on substrate temperature for deposition in pure Ar (right). The binding energies are derived from X-ray excited valence band spectra. All films were deposited using a total pressure of 0.5 Pa, a sputter power density of 0.74 Wcm 2 and a substrate to target distance of 10 cm. The horizontal line indicates the position of the conduction band minimum...

RF sputtering is necessary when dielectric compounds such as sintered Zn0 Al203 disks are sputtered [58], Since about 1995, it has been possible to make conductive sintered ceramics due to reducing annealing of the ceramic or due to incorporation of special dopants [80] on a large scale. When the conductivity of the target material is sufficient, it is possible to use either MF, pulsed, or DC plasma excitation for sputtering. 

Tin doped ln203 (ITO) films, widely used in photonic devices, are prepared by sputtering [122-127], The sputtering technique requires sufficiently dense targets without any additives for highly conductive films [128-130], Due to low sinterabiliry of ITO [131,132], however, a costly hot-pressing procedure is often necessary. Another application of soft mechanochemistry where dissolution reprecipitation is involved was proposed [133],... 

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