Sputtering target fabrication

By reactive sputtering, many complex compounds can be formed from relatively easy-to-fabricate metal targets, insulating compounds can be deposited using a d-c power supply, and graded compositions can be formed, as described. The process, however, is compHcated. 

Alternative Thin-Film Fabrication Approaches. Thin films of electronic ceramic materials have also been prepared by sputtering, electron beam evaporation, laser ablation, chemical beam deposition, and chemical vapor deposition (CVD). In the sputtering process, targets may be metal... 

Silicon wafers doped with phosphorus (resistivity 0.1 D. cm) have been used as substrates. A composite aluminum+silicon (Al+Si) films were fabricated by magnetron sputtering of a compound target containing 45 at. % of Si and 55 at. % of Al. The films thickness was varied in the range of 20-140 nm. Then... 

Mobile ion contamination Whereas tungsten gates fabricated using sputter deposition need ultra pure targets [Yamamoto et al.199], CVD-W (using 99.5% purity WF6) showed very low (0.01 ppm) mobile ion contamination [Kobayashi et al.200]. 

Al-Ti alloy films were fabricated by magnetron sputtering of an A1 target composed with Ti insets. An area of Ti insets was from 1 to 40 % of the total sputtering area. The thickness of the films was 0.25-1.2 pm. Electrochemical anodic oxidation was carried out in 10 % aqueous solution H2SO4 at forming current densities (Jf) from... 

Fig. 1(a) shows concentration profiles of the components in the as-deposited and anodized film fabricated by magnetron sputtering of the composed target with the 25 % Ti inset area. The average content of Ti atoms in the as-deposited film was 27 %. They were uniformly distributed over the film thickness. Oxygen on top of the film relates to the native oxide. Similar results have been obtained for alloy films with another content of Ti. The difference between percentage of the Ti inset area and concentration of Ti atoms in deposited films was less than 10 %. 

---