Sputtering target purity

BN films were deposited on silicon (100) wafer with resistivity (5-8Q cm) by a magnetron sputtering system. Sputtering target used here was a hot-pressed h-BN with 4N purity. The substrate was applied with a negative bias at 180V and 300V, respectively. Deposition was carried out with a base pressure of 2x 1 O Pa and mixed... 

Improved design of sputtering equipment somewhat allows the substitution of CVD tungsten. Sputter targets used for thin layers in microelectronics manufacture are made of high or ultrahigh purity W, W-10%Ti, and WSi (see Section 5.7.7). 

Powders having sufficient purity can be processed to sputter targets directly. Tungsten sputter taigets have usually been manufactured by hot pressing. However, it was not possible to maintain the high-purity level of the powder. A much better way to achieve... 

Disks as sputtering cathodes (high purity W, W-Ti, W-Si , MoW). Sputter targets are used to produce thin layers in integrated circuits (VLSI) by PVD. Recently, W-Mo sputter targets were used for the manufacture of flat panel displays [7.19]. 

The results of a GDMS analysis of high-purity TiW are summarized in Table 4. High-purity TiW is very commonly used as the metallization to provide the conducting links in the construction of semiconductor devices. The metallization is commonly deposited by sputtering from a high-purity alloy target onto the sub-... 

The other method consists of the sputtering of a high-purity gold target with argon ions, followed by the subsequent deposition of the sputtered gold atoms on the surface of the moving powder support.127 The... 

Mobile ion contamination Whereas tungsten gates fabricated using sputter deposition need ultra pure targets [Yamamoto et al.199], CVD-W (using 99.5% purity WF6) showed very low (0.01 ppm) mobile ion contamination [Kobayashi et al.200]. 

The AlO,- insulator layer was deposited on the ITO by rf magnetron sputtering (13.56 MHz) from a planar AI2O3 ceramic target of 99.99% purity in pure Ar (99.998%). The sputter gas pressure was 8 x 10 mbar. This yielded AlO deposition rates between 4.0 nm/min and 6.0 nm/min. The base pressure prior... 

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