Target preparation sputtering

Alternative Thin-Film Fabrication Approaches. Thin films of electronic ceramic materials have also been prepared by sputtering, electron beam evaporation, laser ablation, chemical beam deposition, and chemical vapor deposition (CVD). In the sputtering process, targets may be metal... 

Direct-current sputtering is not generally applicable for the preparation of thin-film solid electrolytes since these compounds are electronic insulators. The target surface would be charged with the same polarity as that of the ions in the plasma, and the sputtering plasma would rapidly break down. 

The PTFE/Si3N4 multilayers were prepared by Ar+ ion beam alternatively sputtering pure PTFE and Si3N4 ceramic target in a polyfunctional beam assisted deposition system. Si (100) wafer is the substrate. The mutlilayer film has eleven layers with alternatively PTFE and Si3N4 layers, the inmost and... 

We prepared thin film Pt alloy electrodes by Ar-sputtering Pt and the second metal targets simultaneously onto a disk substrate at room temperature (thickness approximately 200 nm). The resulting alloy composition was determined by gravimetry and X-ray fluorescent analysis (EDX). Grazing incidence (i7= 1°) X-ray diffraction patterns of these alloys indicated the formation of a solid solution with a face-centered cubic (fee) crystal stmeture. 

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