Deposition by d.c. Magnetron Sputter with a Hot Boron Target

2 Deposition by d.c. Magnetron Sputter with a Hot Boron Target 

A quantitative evaluation of the three magnetron sputter processes with respect to the film-forming particle fluxes (for the analysis procedure see section 5.5.2) revealed that within the error of measurement the d.c. process with boron target had the same criticalPtot/ between 180 and 265 (eV amu) as the two RF processes [62]. This is in good agreement with the values found for pulsed laser deposition by Mirkarimi et al. [17]. 

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