Sputtering target specifications

Sputtering target specifications may include, for the target material ... 

The analysis of specific elements for which GDMS is particularly well suited compared to other methods (e.g., measurement to ppb levels of S, Se, Te, Pb, Bi, Tl, in high-performance alloys and measurement of U andTh in sputter targets)... 

Major work is needed for designing new-generation batch and continuous reactors to suit the needs of different feedstocks during in situ HDS processes ( HGP). Novel electrocatalyst developments should also be undertaken with a wide array of materials to target the tenacious sulfur, nitrogenous, and aromatic molecules. An example would be sputter deposited customized electrocatalysts that have the potential to target specific classes of molecules with improved selectivity at reduced cost [24, 25]. 

As part of the specifications for a sputtering target, the density of the target should be specified. Generally, the higher the density the better. Above about 96% density, porosity... 

In some cases, metal plates are rolled to a specific thickness to form the sputtering target. This can introduce rolling stresses and texturing that should be annealed before the plate is shaped to final dimensions. Annealing may cause grain growth, which may be undesirable. 

In some configurations, the sputtering target can provide specific vaporization geometries - e.g. fine source from an extended planar magnetron sputtering source. 

Porosimetry The determination of the open pore volume in a material. Example Mercury porosimetry, where mercury is hydrostatically forced into the pores and the weight change is measured. Porosimetry can be used in the specification of sputtering targets formed by powder pressing processes. 

Another way to achieve a wide variety of the metallic compositions is sputtering deposition, where a set of ion beams hits a target surface. Each sputter gun holds targets of a specific element of interest. This process, called sputter deposition, is the primary method for the production of thin films [129]. Details of the preparation can be obtained elsewhere [130]. 

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