Sputtering target configurations

Figure 7.6 Sputtering target configurations (clockwise) Planar DC diode, planar magnetron, S gun, hollow cylinder, spool, hemispherical, post, and rotating tubular magnetron...

As the source of material (sputtering target) is a solid, a variety of electrode configurations can be used e.g., depositing material downward, upward or sideways. It is possible to electrically bias workpieces being coated. This can encourage a level of ion bombardment that can modify the surface and structure of a coating. 

The research involves the development of techniques for deposition of porous catalyst layers by defining the conditions of pressure, sputter rates, and target configurations that will result in appropriate compositions and morphology for the catalyst layer. The effect of catalyst structure and composition on the activity of the catalyst layers will be characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), x-ray absorption spectroscopy (XAS), and electrochemical polarization studies in half cells and full cells. New base metal and noble metal alloys and oxides will also be studied with an aim to identify new compositions that will result in enhanced activity. The catalyst activity target is 2500 mW/mg of anode catalyst. 

In some configurations, the sputtering target can provide a large-area vaporization source. 

In some configurations, the sputtering target can provide specific vaporization geometries - e.g. fine source from an extended planar magnetron sputtering source. 

The simple d-c diode sputtering configuration has the advantage that (/) large areas can be sputtered rather uniformly over long periods of time (2) the target can be made conformal with the substrate (J) the target-to-substrate distance can be made smaU compared to thermal vaporization and (4) the... 

The concept of baffled reactive magnetron sputtering dates back to the early 1980s [10], The basic configuration is shown in Fig. 5.9. A reactive gas baffle is mounted in front of the target. 

Fig. 5.25. Dual magnetron configuration for MF reactive magnetron transitionmode sputtering. Fast PEM control of the reactive gas flow inlet is applied via a piezoelectric valve for the gas inlet between the targets is used. Either all oxygen can be introduced between the cathodes or the total flow can be divided such that most of the reactive gas is introduced via the outer gas lines...

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