Sputter deposition elements

Thick Film Example. As the peaks become thicker the possibility of interference of the distributions from two or more of the elements is also increased. This is particularly true for heavier elements which inherently appear closer together in terms of the energy of the scattered ions. A particularly difficult example of this situation is shown in Figure 2, again for a sputter-deposited solid lubricant film, in this case a thicker layer on a steel substrate. Figure 2... 

The objective of this research work is to develop a highly conductive copper alloy based diffusion barrier for copper metallization. The criteria for selection was that minimal increase in resistivity resulted on addition of one atomic percent of second element to copper. The copper-1 at.% zinc alloy conforms to this criteria and hence was selected as a candidate material for further study. Pure copper can easily be electroplated from simple acid copper baths, but the alloys of copper are more difficult when the deposition potential of individual elements is widely separated as in the present case. A Cu-Zn alloy can be deposited from baths containing coordinating agents. Having established that a Cu-Zn alloy can be successfully electroplated, an alloy of composition Cu-3.5%Zn was sputter deposited to develop an MOS capacitor and electrical testing was performed on as-sputtered and annealed samples. The bias temperature stability tests indicate that the alloy possesses promising diffusion barrier properties. 

In contrast, physical techniques of thin film synthesis are based upon evaporation or sputtering of elemental or multicomponent sources and subsequent deposition of this material onto a substrate molecular precursors do not play a significant role in thin film synthesis via these techniques. Examples of physical techniques used to prepare thin films include (1) Molecular Beam Epitaxy (2) sputtering, ... 

Another technique that requires less instrumentation than those discussed above involves the analysis of the sputter deposited film from the alloy. A flat metallic plate is positioned so that it intercepts part of the sputtered flux without being resputtered by the ion beam. The sputter deposited layer should be built up for periods longer than it takes to generate a steady state surface on the sputtered alloy to insure that the sputtered film has reached a composition equal to the bulk alloy and yet be several times thicker than the analysis depth of the surface technique. If the angular distribution of the sputtered flux of A and B is not uniform, then the deposited film composition will differ at different locations. It is often assumed that the sticking coefficient of each element is identical. Of course if one element in the alloy is volatile the method will fail. 

Fig. 22.12 OER currents at the end of the three consecutive potential scans to 1.45 V (a) and 1.5 V (b) of sputter-deposited Ir on Ru with total amount of the two elements at 2 pg/cm. Order of lines from the top 1st, 2nd, 3rd potential scans. Test procedure and conditions same as in Fig. 22.8...

Another way to achieve a wide variety of the metallic compositions is sputtering deposition, where a set of ion beams hits a target surface. Each sputter gun holds targets of a specific element of interest. This process, called sputter deposition, is the primary method for the production of thin films [129]. Details of the preparation can be obtained elsewhere [130]. 

For an Al-containing Mg alloy, Al-enrichment can normally be detected in the anodized coating (Shi et ah, 2006b). Some other alloying elements may also be enriched in an anodized film after anodizing. For example, alloying element enrichment was found on sputter-deposited Mg-0.4 at.% W and Mg-1.0 at.% W model alloys (Bonilla et al., 2002a,b). The alloys were anodized at lOmA/cm up to 150 V in a 3M ammonium hydroxide +... 

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