Spin-cast devices

Xu Y, Long G, Huang L et al (2010) Polymer photovoltaic devices with transparent graphene electrodes produced by spin-casting. Carbon 48 3308-3311... 

The first successful application of this method was reported by Mullen and coworkers [18]. The removal of their solubilizing group occurs thermally at temperatures as low as 180 °C, yielding pentacene and a volatile tetrahalobenzene. The tetrachloro compound 4 (Fig. 3.3) formed good-quality films from spin-cast solution, and heating the film of the soluble precursor at 200 °C for 5 s yielded the desired acene film. FET properties for devices made from solution-cast films were quite good - measured mobilities were as high as 0.2 cm2 V-1 s-1 with on/off current ratios of 106. 

As is evident from a consideration of Figs. 7-9, each of these chromophores has exhibited electro-optic activity exceeding that of lithium niobate while at the same time exhibiting auxiliary properties of chemical stability (Td >300 °C) and solubility that permits preparation of device quality materials [183,210-212]. These materials also illustrate another major direction in the preparation of electro-optic materials namely, the development of bridging segments that lead to improved chemical stability, improved solubility in spin-casting solvents, improved compatibility with polymer host materials, and which inhibit unwanted intermolecular electrostatic interactions (we shall discuss such interactions... 

Figure 5.25 shows the FET characteristics of a device in p-channel mode with MDMO-PPV as the channel material. Figures 5.25a and b show the situation for MDMO-PPV spin-cast from a toluene solution. The hole current... 

DTM-101 thickness monitor. After fabrication the device was transferred to a glove box, so that there was a brief exposure of the device to air. The device was hermetically sealed in the glove box under dry nitrogen atmosphere and then was taken out. Subsequently all the electrical measurements were done in the ambient atmosphere. OLEDs were also fabricated by the spin casting of Alq(l) and Alq(2) from the chloroform solution. The... 

TABLE 1. Effect of poly[5,5 -bis(3-dodecyl-2-thienyl)-2,2 -dithiophene] of varying molecnlar weights of the cnrrent invention on mobility and cnrrent on/off ratio when spin casted onto thin film transistor devices. 

The ability to fabricate optical quality thin films by spin-casting from solution has proven to be a key step in the development of plastic electronic devices (such... 

Several polymer/polyelectrolyte-nanocrystal hybrid devices have been fabricated seeking to exploit the electro and photoluminescent properties of such material [179-188]. Device fabrication in all these cases is by low-cost self-assembly based techniques. These devices utilize thin films of these hybrids obtained either by multilayer deposition or drop/spin casting methods. Thus, solar cells have been made from poly(2-hexylthiophene)-CdSe nanorod multilayers, lasers from drop cast films of CdSe-titania composites and an infrared emitter from multilayers... 

The electroluminescence (EL) and photoluminescence (PL) spectra of spin-cast films are also morphologically dependent. It is found that within the CLA region, the EL and PL spectra of spin-cast MEH-PPV films are strongly dependent on spin speed (Fig. 6.19). It is consistently observed that when the polymer solution is coated at high speeds (e.g., 4000-8000 rpm, 0.7 wt%), the resulting devices have... 

For single-layer devices, the emitting layer was spin-cast at 1000-2000 rpm from solutions in formic acid [for polypyridine (PPy) and poly (pyridylvinylene) (PPyV)] or xylenes [(for copolymers of pyridylvinylene (PyV) and phenylenevinylene... 

FIGURE 10.13. Dependence of the emission intensity on injection current of one-, two-, and three-layer LEDs. A spin-cast PDHF film was used for the single-layer device and vapor-deposited films were used for the two- and three-layer devices. (From Ref. 31.)... 

Fig. 3 a Chemical structure of polymer 20. b EL spectra of spin-cast films of 20. The inset shows picture of emission from 20-based device operated at 4 V (taken from [33])... 

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