Infrared Emitters

The main use of elemental As is in alloys with Pb and to a lesser extent Cu. Addition of small concentrations of As improves die properties of Pb/Sb for storage batteries (see below ), up to 0.75% improves the hardness and castabilily of type metal, and 0 5-2.0% improves the sphericity of Pb ammunition. Automotive body solder is Pb (92%),, Sb (5 0%), Sn (2.5%) and As (0.5%). Intcrnxitallic compounds with Al, Ga and In give the 111-V semiconductors (p 255) of which GaAs and InAs are of particular value for light-emitting diodes (LEDs), tunnel diodes, infrared emitters, laser windows and Hall-effect devices (p. 258). 

Strasser G., Gianordoli S., Hvozdara L., Bichl H., Unterrainer K., Gomik E., Kruck P., Helm M., Heyman J., GaAs/AlGaAs intersubband mid-infrared emitter, Mat. Res. Soc. Symp. Proc., 1998 484 165-170. 

El-Kady, Biswas R., Ye Y., Su M.F., Puscasu I., Pralle M., Johnson E.A., Daly J. and Greenwald A, Tunable narrow-band infrared emitters from hexagonal lattices, Photonics and Nanostructures 2003 1 69-77. 

Imbert, D., Cantuel, M., Biinzli, J.C.G, et al. (2003) Extending lifetimes of lanthanide-based near-infrared emitters (Nd, Yb) in the millisecond range through Cr(III) sensitization in discrete bimetalhc edifices. Journal of the American Chemical Society, 125, 15698-15699. 

BiMc3 is the only bismuthine that can be distilled at atmospheric pressure. Complete vapour pressure and thermal stability data were determined by Amberger. Over the temperature range 367-409 °C the decomposition of Me3Bi is a first-order homogeneous process. This is consistent with successive loss of methyl ligands. MesBi is used in an MOCVD process to produce InSbi- Bi, semiconductors which are infrared emitters and detectors . ... 

Several polymer/polyelectrolyte-nanocrystal hybrid devices have been fabricated seeking to exploit the electro and photoluminescent properties of such material [179-188]. Device fabrication in all these cases is by low-cost self-assembly based techniques. These devices utilize thin films of these hybrids obtained either by multilayer deposition or drop/spin casting methods. Thus, solar cells have been made from poly(2-hexylthiophene)-CdSe nanorod multilayers, lasers from drop cast films of CdSe-titania composites and an infrared emitter from multilayers... 

Microstructured surfaces, as well as micromachined substrates and devices discussed in Sects. II, III, and iy are suitable for a number of applications. They include reflective and absorbing surfaces, wavelength-sensitive filters, multiaperture lens arrays and Fresnel microoptics, field emitter arrays, precision apertures, or molds for microstructured surfaces of other materials. Microstructured alumina ceramics can also be used for tuned broadband infrared emitters. In addition, due to the robustness at high temperatures and well-developed and controlled porosity, the freestanding, heat-treated micromachined anodic alumina substrates can be used for the fabrication of sensors that incorporate a high temperature microheater with low power consumption. 

Seyed-Yagoobi, J. and H. Noboa, 2003. Drying of uncoated paper with gas-fired infrared emitters—Optimum emitter s location within a paper machine drying section. Drying Techrwlogy, 21(10), 1897-1908. 

Xie R, Chen K, Chen X, Peng X (2008) InAs/InP/ZnSe core/shell/shell quantum dots as near-infrared emitters bright, narrow-band, non-cadmium containing, and biocompatible. 

Colloidal solution for preparation of tin dioxide films was deposited on glass substrate. Rotational speed of the centrifuge was 3800 rpm. Centrifugation time was 3-5 s. The substrates with the deposited films were dried by an infrared emitter at 80 C for 3-5 min. Low temperature annealing was maintained to prevent the occurrence of cracks on the Sn02 films. Then the sample is placed in a muffle furnace and dried at 400 C for 15 min. The number of deposited layers of Sn02 was 15. The thickness of the deposited film was estimated from the weight of the film and was about 300 nm. 

By changing the temperature from 82.8 to 103.6°C, the peak wavelength changed from 916.2 to 922 nm. The correlation coefficient between fat content determined by the infrared emitter instmment and by chemical analysis was 0.82, with a standard error of 1.98% fat. The standard deviation of replications for the chemical analysis was 0.35% fat (30). 

D. R. Massie. Fat measurement of ground beef with a gaflium arsenide infrared emitter. In Quality Detection of Foods. J. J. Gaffney, ed. SL Joseph, MI American Society of Agricultural Engineers (ASAE). 1 24—26,1976. 

Program Initial solar reflectance 3-year solar reflectance Infrared emittance... 

The method presented Is applied on a device simulating the functioning of a light guard. This simulation Is achieved by a programmed loglo using the MOTOROLA 6809 microprocessor. Four Infrared emitters are cyclically activated every 4 ms one after another. 

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