Single antimonides

The trimeric indium antimonide single-source precursor [Et2InSb(SiMe3)2]3, prepared from Et2InCl and Sb(SiMe3)3, was shown in a preliminary study to form InSb nanocrystals (average particle size 10 nm) by solid-state thermolysis at 400 °C under a static vacuum. However, the particles were contaminated with elemental indium.399... 

Monomeric carbene complexes with 1 1 stoichiometry have now been isolated from the reaction of 4 (R = Bu, adamantyl or 2,4,6-trimethylphenyl R = H) with lithium l,2,4-tris(trimethylsilyl)cyclo-pentadienide (72). The crystal structure of one such complex (R = Bu) revealed that there is a single cr-interaction between the lithium and the carbene center (Li-C(carbene) 1.90 A) with the cyclopentadienyl ring coordinated in an if-fashion to the lithium center. A novel hyper-valent antimonide complex has also been reported (73). Thus, the nucleophilic addition of 4 (R = Mes R = Cl) to Sb(CF3)3 resulted in the isolation of the 1 1 complex with a pseudo-trigonal bipyramidal geometry at the antimony center. 

Bismuth antimonide (BiSb) is not really a compound but single crystals of the alloy of bismuth and antimony. The crystals are used as semiconductors in the electronics industry and to produce type for printing presses and low-melting-point electrical fuses. 

The filled skutterudite antimonides appear to represent excellent examples of electron-crystal, phonon-glass materials. The incoherent rattling of the loosely bound lanthanide atoms in these materials is inferred from the large values of the ADP parameters obtained in single-crystal structure refinements. This rattling lowers the thermal conductivity at room temperature to values within two to three times Km... 

A new ternary antimonide, CcsPdeSbs was prepared by arc melting of the elemental components and subsequent annealing at 1023 K by Gordon et al. (1995). Its orthorhombic crystal structure was determined from single crystal X-ray data a = 1.3481, b = 0.4459, c = 1.0050. Purity of the elements was at least 99.9%. 

Removal of contamination by ion bombardment with inert gas ions, followed by annealing. This method can be applied to either single or poly-crystalline materials and has been found to be effective for the compound indium antimonide having a melting point of 525°C as well as for more refractory materials, ft has also been found to be effective in removing a monolayer of carbon from nickel and silicon crystals. 

In this section we present experimental results on the temperature dependence of elastic constants for intermetallic rare-earth compounds in which magnetoelastic effects due to the presence of crystal fields are dominant. There are systematic studies of these effects for given structures across the rare-earth series. Examples are the rare-earth monopnictides, especially the rare-earth antimonides (RSb), the rare-earth dialuminides (RAlj) and rare-earth compounds with the CsCl structure. From such experiments one obtains the single-ion magnetoelastic coupling constants gj. across the series and in a few cases the quadrupolar coupling constant gf [eq. (38)] too. The case of a cooperative Jahn-TeUer effect will be treated separately in sect. 2.4.3. The examples presented here can be explained mostly with the single-ion strain susceptibility Xr [ <1- (35) instead of eq. 

The basis for this preliminary hypothesis is provided by the data from an approximate estimate of the vacancy concentrations [11] in undoped and doped single crystals of indium antimonide, which we obtained by comparing the x-ray (px) a.nd e erimental (pe) densities (Table 2). As may be seen from the table, the vacancy concentration in undoped indium antimonide is about 2 10 cm, and this value is maintained for doped indium antimonide up to a free-electron density of (1.2-1.5) 10 cm (i.e., a tellurium content of about 2 10 cm ). Only with a further increase in tellurium concentration in the crystal does the vacancy concentration iincrease. Therefore, with a further increase in tellurium content in the solid solution, the limitation in the free-carrier density may be due to both precipitation of tellurium from the solid solution and the formation of compensating acceptor vacancies by the mechanism given in [2]. 

Aluminium antimonide AlSb 295 200 Single crystal, Te-doped... 

The vapors formed by component A and by the compound A Bni can also belong to systems with eutectic. One example is the 40% strength lowering of a single crystal of indium antimonide upon contact with a drop of liquid indium. 

For infrared microspectroscopy, single-element detectors are used for point and mapping measurements. More recently, array detectors have been applied for spectroscopic imaging in the infrared. In infrared focal plane arrays, the monolithic silicon design used in CCDs is replaced by a hybrid construction. In a hybrid detector, photon detection occurs in a semiconductor layer (indium antimonide, mercury cadmium telluride, and doped-silicon are typical detector materials), while the readout and amplification stages are carried out in a silicon layer. The two layers are electrically connected at each pixel through indium bump-bonds . Other innovations such as microbolometer arrays also show promise for spectroscopic imaging applications. 

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