Aluminium antimonide

Table 4.1-43 Phonon wavenumbers of aluminium compounds aluminium nitride (300 K, from Raman scattering) aluminium Phosphide (from Raman spectroscopy) aluminium arsenide (from Raman spectroscopy 0.5 p.m layer of AlAs on GaAs T = 31K) aluminium antimonide (from Raman spectroscopy)...

Aluminium Antimonide (AlSb). Aluminium antimonide (like AlAs) is an indirect-gap semiconductor with camel s back conduction band minima near X (Fig. 4.1-69). 

Aluminium Antimonide (AlSb). Aluminium antimonide grown without intentional doping is p-t)T>e and becomes intrinsic at about 1000 K. For the temperature dependence of the electrical conductivity, see Fig. 4.1-71. 

Aluminium antimonide AlSb 295 200 Single crystal, Te-doped... 

The diffusion of zinc in n- and p-type aluminium antimonide was measured at 660 to 860C by using a radio-tracer technique. At high donor concentrations, the diffusion constant was found to decrease. The diffusion was described by ... 

Aluminium antimonide AlSb I F43m fee Zinc blende At normal pressure Fig. 4.1-2... 

Fig. tt.1-68 AlAs. Band structure calculated by an orthog- Fig. tt.1-69 Band structure of aluminium antimonide Dualized LCAO method [1.65]... 

Tableir.l-W Effective masses of electrons ( ) and holes (/Wp) for aluminium compounds (in units of the electron mass mo). Aluminium nitride (AIN), calculated values aluminium phosphide (AIP), calculated from band structure aluminium arsenide (AlAs), calculated from band structure data Aluminium antimonide (AlSb), theoretical estimates...

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