Silicon solid state

Venkatesan, M., and Beinglass, I., Single-Wafer Deposition of Polycrystalline Silicon, Solid State Technology, pp. 49-53 (March 1993)... 

Uses. In metallurgy for hardening copper and lead alloys to prepare GaAs for electronic devices, doping agent in germanium and silicon solid state products, special solders. 

Mendel E. Polishing of silicon. Solid State Technol 1967 10 27-39. 

Richter H, Wang ZP, Ley L (1981) The one phonon Raman spectrum in microcrystalline silicon. Solid State Commun 39 625-629... 

Silicon Solid-state Chemistry.—Contrary to the pattern adopted in previous volumes, the chemistry of aluminosilicates and zeolites will not be discussed here the data published during the period of this Report associated with these materials are considered in detail in Chapter 3. In this section, silicon dioxide and the silicates will be described separately emphasis will be laid on the inorganic chemistry of these compounds, and papers describing solely their catalytic, adsorption, diffusion, and other similar properties will not be considered. 

A. Bhattacharyya and B. G. Streetman, Theoretical Considerations Regarding Pulsed C02 Laser Annealing of Silicon, Solid State Comm., 36, pp. 671-675,1980. 

S. R. Dhariwal and V. N. Ojha, Band gap narrowing in heavily doped silicon, Solid State Electron. 25 (1982) 909-911. 

Silicon Solid-state Chemistry. Following the pattern set in the previous volume, this aspect of silicon chemistry will be subdivided into four sections in which the literature published on silicon dioxide, silicates, aluminosilicates, and zeolites is described separately. In all four sections, emphasis will be laid on the inorganic chemistry of these materials, and papers describing solely their... 

Laboratory (MBE) 14-17). The resultant delta-doped back-illuminated CCD can detect particles with a low-energy threshold improvement of at least an order of magnitude for protons to below 1 keV, and for electrons down to 100 eV. Extension of delta doping to lu resisitivity detectors has also been demonstrated more recently. Furdier work in diis area is mutorway. Widi delta-doped detectors, we have demonstrated the reduction of die deadlayer in silicon solid-state detectors to 1 nnL The low-energy detection threshold, high efficiency, and the stability of performance of these detectors make them ideal candidates for future spacecraft skin sensors. 

AnastassaJds, E., Knczuk, A., Burstein, E., PoUack, RH., Cardona, M. Effect of static uniaxial stress on the Raman spectrum of silicon. Solid State Commun. 8, 133-138 (1970)... 

Borghesi A, Guizzetti G, Sassella A et al (1994) Induction-model analysis of Si-H stretching mode in porous silicon. Solid State Commun 89 615-618... 

Choi S-H, Chung H, Shin G-S (1995) Conditions of luminescence degradation or enhancement in porous silicon. Solid State Commun 95(6) 341-345... 

Takeda E, Nakamura T, Fujii M, Miura S, Hayashi S (2006) Surface plasmon polariton mediated photoluminescence from excitons in silicon nanocrystals. Appl Phys Lett 89(10) 101907 Tsybeskov L, Duttagupta SP, Fauchet PM (1995) Photoluminescence and electroluminescence in partially oxidized porous silicon. Solid State Commun 95(7) 429-433 Tsybeskov L, Duttagupta SP, Hirschman KD, Fauchet PM (1996) Stable and efficient electroluminescence from a porous silicon-based bipolar device. Appl Phys Lett 68(15) 2058-2060 Valenta J, Lalic N, Linnros J (2004) Electroluminescence of single silicon nanocrystals. Appl Phys Lett 84(9) 1459-1461... 

Imai K (1981) A new dielectric isolation method using porous silicon. Solid State Electron 24 159-164... 

Kanungo J, Pramanik C, Bandopadhyay S et al (2006) Improved contacts on a porous silicon layer by electroless nickel plating and copper thickening. Semicond Sci Technol 21 964-970 Kanungo J, Maji S, Saha H et al (2009a) Stable aluminium ohmic contact to surface modified porous silicon. Solid-State Electron 53 663-668... 

Alexeev-Popov AV, Gevelyuk SA, Roizin YO, Savin DP, Kuchinsky SA (1996) Diffraction gratings on porous silicon. Solid State Commun 97(7) 591-593... 

Servidori M, Ferrero C, Lequien S, Milita S, Parsinin A, Romestain R, Sama S, Setzu S, Thiaudiere D (2000) Influence of the electrolyte viscosity on the structural features of porous silicon. Solid State Commun 118 85-90... 

Di Francia G, Maddalena P, Ninno D (1995) Formation of luminescent chemically etched porous silicon. Solid State Commun 96 579-581... 

Lamedica G, Balucani M, Ferrari A, Bondarenko V, Yakovtseva V, Dolgyi L (2002) Gettering technology based on porous silicon. Solid State Phenom 82-84 405 10 Lei Z, Kang Y, Hu M, Qiu Y, Cen H (2004) Origin mechanism of residual stresses in porous silicon film. Proc SPIE 5641 116-123... 

Maly P et al (1994) Transmission study of picosecond photocarrier dynamics in free-standing porous silicon. Solid State Commun 89(8) 709-712 Mathwig K et al (2011) Bias-assisted KOH etching of macroporous sihcon membranes. J Micromech Microeng 21 035015... 

Attaf N, Aida MS, Hadjeris L (2001) Thermal conductivity of hydrogenated amorphous silicon. Solid State Commun 120 525-530... 

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