Semiconductors gallium compounds

Omura M, Hirata M, Tanaka A, Zhao M, Makita Y, Inoue N, Gotoh K and Ishinishi N (1996) Testicular toxicity evaluation of arsenic-containing binary compound semiconductors, gallium arsenide and indium arsenide, in hamsters. Toxicol Lett 89 123-129. 

Intermetallic compounds with gallium are used as semiconductors. Indium is used to coat other metals to protect against corrosion, especially in engine bearings it is also a constituent of low-metal alloys used in safety sprinklers. The toxicity of thallium compounds has limited the use of the metal, but it does find use as a constituent of high-endurance alloys for bearings. 

Metallic Antimonides. Numerous binary compounds of antimony with metallic elements are known. The most important of these are indium antimonide [1312-41 -0] InSb, gallium antimonide [12064-03-8] GaSb, and aluminum antimonide [25152-52-7] AlSb, which find extensive use as semiconductors. The alkali metal antimonides, such as lithium antimonide [12057-30-6] and sodium antimonide [12058-86-5] do not consist of simple ions. Rather, there is appreciable covalent bonding between the alkali metal and the Sb as well as between pairs of Na atoms. These compounds are useful for the preparation of organoantimony compounds, such as trimethylstibine [594-10-5] (CH2)2Sb, by reaction with an organohalogen compound. 

Indium and gallium coordination compounds containing phosphine ligands have recently aroused interest for their widespread application as intermediates in the preparation of the Group 13 - Group 14 semiconductors [4], Since the early reports about compounds with transition metal-indium bonds [51, relatively little research has been reported in this field. However there is a growing interest in the coordination chemistry and structural features of heterometallic indium [6] and gallium complexes [7] which are also attractive as potential precursors of new materials with particular properties. 

Bulk elastic modulus, of binary compound semiconductors, 22 145, 146-147t Bulk enzymes, from genetically engineered microbes, 22 480 Bulk erosion, 9 78 Bulk fluid velocity method, 16 688 Bulk gallium nitride, supercritical ammonia solution growth of, 14 96-97 Bulk gases... 

Silicon is the most popular material for photovoltaic (PV) power. Another material is gallium arsenide (GaAs), which is a compound semiconductor. GaAs has a crystal structure similar to that of silicon, but it consists of alternating gallium and arsenic atoms. It is well suited for PV applications since it has a high light absorption coefficient and only a thin layer of material is required, which reduces the cost. 

The same disciission may apply to the anodic dissolution of semiconductor electrodes of covalently bonded compounds such as gallium arsenide. In general, covalent compoimd semiconductors contain varying ionic polarity, in which the component atoms of positive polarity re likely to become surface cations and the component atoms of negative polarity are likely to become surface radicals. For such compound semiconductors in anodic dissolution, the valence band mechanism predominates over the conduction band mechanism with increasing band gap and increasing polarity of the compounds. 

Because of the unique property of some of its compounds, gallium is able to translate a mechanical motion into electrical impulses. This makes it invaluable for manufacturing transistors, computer chips, semiconductors, and rectifiers. 

The compound is used in spectroscopic analysis and in preparing gallium arsenide for making semiconductors. 

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