Gallium preparation

Gallium Oxides. The preparation conditions of gallium oxides and hydroxides are Hsted iu Table 6. 

Metallic Antimonides. Numerous binary compounds of antimony with metallic elements are known. The most important of these are indium antimonide [1312-41 -0] InSb, gallium antimonide [12064-03-8] GaSb, and aluminum antimonide [25152-52-7] AlSb, which find extensive use as semiconductors. The alkali metal antimonides, such as lithium antimonide [12057-30-6] and sodium antimonide [12058-86-5] do not consist of simple ions. Rather, there is appreciable covalent bonding between the alkali metal and the Sb as well as between pairs of Na atoms. These compounds are useful for the preparation of organoantimony compounds, such as trimethylstibine [594-10-5] (CH2)2Sb, by reaction with an organohalogen compound. 

Arsine is used for the preparation of gallium arsenide [1303-00-0] GaAs, (17), and there are numerous patents covering this subject (see Arsenic and ARSENIC alloys). The conversion of a monomeric arsinogaHane to gallium arsenide has also been described (18). GaUium arsenide has important appHcations in the field of optoelectronic and microwave devices (see Lasers Microwave technology Photodetectors). 

The preparation of semiconductors by thermal decomposition would appear to be impossible because of the high amount of energy required to break all of the metal-carbon bonds before the atomic species could be formed. However, the thermal method is successful because the reaction to form free methyl radicals, which combine to form ethane, lowers the energetic requirements for the formahon of gallium, for example, according to the equation... 

Most of these compounds were originally prepared by liquid-phase epitaxy. That process is now largely replaced by MOCVD, particularly in the case of gallium arsenide, gallium arsenic phosphide, and gallium aluminum phosphide. 

Silicon is not as prominent a material in optoelectronics as it is in purely electronic applications, since its optical properties are limited. Yet it finds use as a photodetector with a response time in the nanosecond range and a spectral response band from 0.4 to 1.1 im, which matches the 0.905 im photoemission line of gallium arsenide. Silicon is transparent beyond 1.1 im and experiments have shown that a red light can be produced by shining an unfocused green laser beam on a specially prepared ultrathin crystal-silicon slice.CVD may prove useful in preparing such a material. 

The chalcogenide bromides and chlorides may be prepared by the reaction of the halide with the respective chalcogenide in a sealed ampoule. A mixture of gallium metal and chalcogen may be used, instead of the chalcogenide. The chalcogenide iodides are S3mthesized directly from the elements. The exact preparative conditions are listed in Table XVIII 160,165). 

In 1996, we started more detailed investigations on group 13/15 compounds containing the heavier elements of group 15, Sb and Bi, focussing on the synthesis of aluminum and gallium stibines and bismuthines. At the same time. Wells et al. also began to prepare M—Sb adducts and heterocycles (M = B, Ga, In). These studies, which are the object of this review, resulted in... 

For relatively simple matrices, such as pure metallic CRMs synthetic reference materials for direct calibration were prepared and used, for example Bi, Cd, Hg, Pb and T1 in high purity gallium (HUtenkamp and Jackwerth 1988), Ag in copper (Pau-wels et al. 1990) and Au and Pd in silver (Hinds 1993). Direct calibration by solid biological materials with added analyte belongs also to these quite successfully applied techniques (Hofmarm et al. 1992). 

For the preparation of subvalent gallium iodide, a simpler sonochemical synthesis based on papers of M. L. H. Green has been established (see IVB) Schnepf, A. Doriat, C. Mollhausen, E. Schnockel, H. Chem. Commun. 1997, 2111. 

Indium and gallium coordination compounds containing phosphine ligands have recently aroused interest for their widespread application as intermediates in the preparation of the Group 13 - Group 14 semiconductors [4], Since the early reports about compounds with transition metal-indium bonds [51, relatively little research has been reported in this field. However there is a growing interest in the coordination chemistry and structural features of heterometallic indium [6] and gallium complexes [7] which are also attractive as potential precursors of new materials with particular properties. 

Gallium(III) naphthalocyanines (e.g., trihexylsiloxygallium(III) naphthalocyanine, Amax (PhH) 795 nm) have been prepared for PDT applications.354... 

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