Semiconductors defined

The empirical pseiidopotential method can be illustrated by considering a specific semiconductor such as silicon. The crystal structure of Si is diamond. The structure is shown in figure Al.3.4. The lattice vectors and basis for a primitive cell have been defined in the section on crystal structures (ATS.4.1). In Cartesian coordinates, one can write G for the diamond structure as... 

Several factors detennine how efficient impurity atoms will be in altering the electronic properties of a semiconductor. For example, the size of the band gap, the shape of the energy bands near the gap and the ability of the valence electrons to screen the impurity atom are all important. The process of adding controlled impurity atoms to semiconductors is called doping. The ability to produce well defined doping levels in semiconductors is one reason for the revolutionary developments in the construction of solid-state electronic devices. 

Common teniiinology used to characterize impurities and defects in semiconductors includes point and line defects, complexes, precipitates and extended defects. These teniis are somewhat loosely defined, and examples follow. 

For tire purjDoses of tliis review, a nanocrystal is defined as a crystalline solid, witli feature sizes less tlian 50 nm, recovered as a purified powder from a chemical syntliesis and subsequently dissolved as isolated particles in an appropriate solvent. In many ways, tliis definition shares many features witli tliat of colloids , defined broadly as a particle tliat has some linear dimension between 1 and 1000 nm [1] tire study of nanocrystals may be drought of as a new kind of colloid science [2]. Much of die early work on colloidal metal and semiconductor particles stemmed from die photophysics and applications to electrochemistry. (See, for example, die excellent review by Henglein [3].) However, the definition of a colloid does not include any specification of die internal stmcture of die particle. Therein lies die cmcial distinction in nanocrystals, die interior crystalline stmcture is of overwhelming importance. Nanocrystals must tmly be little solids (figure C2.17.1), widi internal stmctures equivalent (or nearly equivalent) to drat of bulk materials. This is a necessary condition if size-dependent studies of nanometre-sized objects are to offer any insight into die behaviour of bulk solids. 

Because there are two changes ia material composition near the active region, this represents a double heterojunction. Also shown ia Figure 12 is a stripe geometry that confines the current ia the direction parallel to the length of the junction. This further reduces the power threshold and makes the diffraction-limited spreading of the beam more symmetric. The stripe is often defined by implantation of protons, which reduces the electrical conductivity ia the implanted regions. Many different stmctures for semiconductor diode lasers have been developed. 

Deposition of Thin Films. Laser photochemical deposition has been extensively studied, especially with respect to fabrication of microelectronic stmctures (see Integrated circuits). This procedure could be used in integrated circuit fabrication for the direct generation of patterns. Laser-aided chemical vapor deposition, which can be used to deposit layers of semiconductors, metals, and insulators, could define the circuit features. The deposits can have dimensions in the micrometer regime and they can be produced in specific patterns. Laser chemical vapor deposition can use either of two approaches. 

Direct and Indirect Energy Gap. The radiative recombination rate is dramatically affected by the nature of the energy gap, E, of the semiconductor. The energy gap is defined as the difference in energy between the minimum of the conduction band and the maximum of the valence band in momentum, k, space. Eor almost all semiconductors, the maximum of the valence band occurs where holes have zero momentum, k = 0. Direct semiconductors possess a conduction band minimum at the same location, k = O T point, where electrons also have zero momentum as shown in Eigure la. Thus radiative transitions that occur in direct semiconductors satisfy the law of conservation of momentum. 

The impurity atoms used to form the p—n junction form well-defined energy levels within the band gap. These levels are shallow in the sense that the donor levels He close to the conduction band (Fig. lb) and the acceptor levels are close to the valence band (Fig. Ic). The thermal energy at room temperature is large enough for most of the dopant atoms contributing to the impurity levels to become ionized. Thus, in the -type region, some electrons in the valence band have sufficient thermal energy to be excited into the acceptor level and leave mobile holes in the valence band. Similar excitation occurs for electrons from the donor to conduction bands of the n-ty e material. The electrons in the conduction band of the n-ty e semiconductor and the holes in the valence band of the -type semiconductor are called majority carriers. Likewise, holes in the -type, and electrons in the -type semiconductor are called minority carriers. 

Sihcon is a Group 14 (IV) element of the Periodic Table. This column iacludes C, Si, Ge, Sn, and Pb and displays a remarkable transition from iasulatiag to metallic behavior with increasing atomic weight. Carbon, ia the form of diamond, is a transparent iasulator, whereas tin and lead are metals ia fact, they are superconductors. SiUcon and germanium are semiconductors, ie, they look metaUic, so that a poHshed siUcon wafer is a reasonable gray-toned mirror, but they conduct poorly. Traditionally, semiconductors have been defined as materials whose resistance rises with decreasiag temperature, unlike metals whose resistance falls. 

As is to be expected, inherent disorder has an effect on electronic and optical properties of amorphous semiconductors providing for distinct differences between them and the crystalline semiconductors. The inherent disorder provides for localized as well as nonlocalized states within the same band such that a critical energy, can be defined by distinguishing the two types of states (4). At E = E, the mean free path of the electron is on the order of the interatomic distance and the wave function fluctuates randomly such that the quantum number, k, is no longer vaHd. For E < E the wave functions are localized and for E > E they are nonlocalized. For E > E the motion of the electron is diffusive and the extended state mobiHty is approximately 10 cm /sV. For U <, conduction takes place by hopping from one localized site to the next. Hence, at U =, )J. goes through a... 

The negative electron and light hole masses Hsted for HgTe are a consequence of its being a semimetal rather than semiconductor. The curvatures of these two bands are inverted with respect to the convention defined for semiconductors. 

As with any other fabrication process, masks are needed to define the features to be etched. It is common that the etch used for the semiconductor also etches the masking material. For this reason many different masks are used in etching, including photoresist, dielectric films, and metals. Masking can be a complex issue, especially when very deep etches (>5 fim) are performed with high aspect ratios (148). 

Cartiers can also be generated in a semiconductor by the absorption of light or injected into the semiconductor from ap—n or Schottky junction. In either case, as soon as the source is removed the density of those excess carriers begins to decrease exponentially with time. The time it takes for the density to be reduced to 1/ of the original value is defined as the carrier lifetime, T. For siUcon, T is typically in the microsecond range. 

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