Semiconductor stoichiometric

Titanium Sesc uioxide. Ti202 has the comndum stmcture. At room temperature it behaves as a semiconductor having a small (0.2 eV) band gap. At higher temperatures, however, it becomes metallic. This is associated with marked change in the mean Ti—Ti distance. As with TiO, titanium sesquioxide, Ti202, may be made by heating a stoichiometric mixture of titanium metal and titanium dioxide powders at 1600°C under vacuum in an aluminum or molybdenum capsule. 

Semiconducting Ceramics. Most oxide semiconductors are either doped to create extrinsic defects or annealed under conditions in which they become non stoichiometric. Although the resulting defects have been carefully studied in many oxides, the precise nature of the conduction is not well understood. Mobihty values associated with the various charge transport mechanisms are often low and difficult to measure. In consequence, reported conductivities are often at variance because the effects of variable impurities and past thermal history may overwhelm the dopant effects. 

ZnTe The electrodeposition of ZnTe was published quite recently [58]. The authors prepared a liquid that contained ZnGl2 and [EMIM]G1 in a molar ratio of 40 60. Propylene carbonate was used as a co-solvent, to provide melting points near room temperature, and 8-quinolinol was added to shift the reduction potential for Te to more negative values. Under certain potentiostatic conditions, stoichiometric deposition could be obtained. After thermal annealing, the band gap was determined by absorption spectroscopy to be 2.3 eV, in excellent agreement with ZnTe made by other methods. This study convincingly demonstrated that wide band gap semiconductors can be made from ionic liquids. 

The redox behavior of the SeSO -Zn-EDTA system has been discussed on the basis of Pourbaix and solubility diagrams [11], Different complexes and substrates have been employed in order to optimize the electrodeposited thin films. By the selenosulfate method it is generally possible to grow ZnSe with an almost stoichiometric composition however, issues of low faradaic efficiency as well as crystallinity and compactiveness of the product, remain to be solved. Interestingly, in most reports of photoelectrochemically characterized ZnSe electrodeposits, the semiconductor film was found to be p-type under all preparation conditions (ZnSe is normally n-type unless deliberately doped p-type). 

In a non-stoichiometric crystcd, the lattice may have either excess charge or excess cations and/or anions situated in the lattice. Consider the semiconductor, Ge. It is a homogeneous solid and is expected to contain excess charge. The defect reactions associated with the formation of p-type and n-type lattices are ... 

The percolation model of adsorption response outlined in this section is based on assumption of existence of a broad spread between heights of inter-crystalline energy barriers in polycrystals. This assumption is valid for numerous polycrystalline semiconductors [145, 146] and for oxides of various metals in particular. The latter are characterized by practically stoichiometric content of surface-adjacent layers. It will be shown in the next chapter that these are these oxides that are characterized by chemisorption-caused response in their electrophysical parameters mainly generated by adsorption charging of adsorbent surface [32, 52, 155]. The availability of broad spread in heights of inter-crystalline barriers in above polycrystallites was experimentally proved by various techniques. These are direct measurements of the drop of potentials on probe contacts during mapping microcrystal pattern [145] and the studies of the value of exponential factor of ohmic electric conductivity of the material which was L/l times lower than the expected one in case of identical... 

Some insulating oxides become semiconducting by doping. This can be achieved either by inserting certain heteroatoms into the crystal lattice of the oxide, or more simply by its partial sub-stoichiometric reduction or oxidation, accompanied with a corresponding removal or addition of some oxygen anions from/into the crystal lattice. (Many metal oxides are, naturally, produced in these mixed-valence forms by common preparative techniques.) For instance, an oxide with partly reduced metal cations behaves as a n-doped semiconductor a typical example is Ti02. 

A comparative study of oxides which were closely related, but had different electrical properties, showed that both n- and p-type semiconduction promoted the oxidation reaction, forming CO as the major carbon-containing product. In a gas mixture which was 30% methane, 5% oxygen, and 65% helium, reacted at 1168 K the coupling reactions were best achieved with the electrolyte Lao.9Sro.1YO 1.5 and the /i-lype semiconductor Lao.sSro MntL A and the lily pe semiconductor LaFeo.sNbo.2O1 a produced CO as the major oxidation product (Alcock et al., 1993). The two semiconductors are non-stoichiometric, and the subscript 3 — x varies in value with the oxygen pressure and temperature. Again, it is quite probable that the surface reactions involve the formation of methyl radicals and O- ions. 

Unlike a geometrical factor, the value of the factor

with composition in a predictable way. To illustrate this, suppose that stoichiometric MO2 is heated in a vacuum so that it loses oxygen. Initially, all cations are in the M4+ state, and we expect the material to be an insulator. Removal of O2- to the gas phase as oxygen causes electrons to be left in the crystal, which will be localized on cation sites to produce some M3+ cations. The oxide now has a few M3+ cations in the M4+ matrix, and thermal energy should allow electrons to hop from M3+ to M4+. Thus, the oxide should be an n-type semiconductor. The conductivity increases until

reduction continues, eventually almost all the ions will be in the M3+ state and only a few M4+ cations will remain. In this condition it is convenient to imagine holes hopping from site to site and the material will be a p-typc semiconductor. Eventually at x = 1.5, all cations will be in the M3+ state and M2C>3 is an insulator (Fig. 7.3). 

The compound will be stoichiometric, with an exact composition of MX10ooo when the number of metal vacancies is equal to the number of nonmetal vacancies. At the same time, the number of electrons and holes will be equal. In an inorganic compound, which is an insulator or poor semiconductor with a fairly large band-gap, the number of point defects is greater than the number of intrinsic electrons or holes. To illustrate the procedure, suppose that the values for the equilibrium constants describing Schottky disorder, Ks, and intrinsic electron and hole numbers, Kc, are... 

Pure Cr203 is an intrinsic semiconductor with a band-gap of approximately 3.3 eV. Generally, Cr203 shows little stoichiometric variation. On doping with Ti02, Ti4+ ions substitute on Cr3+ sites in the structure. The conductivity of the doped solid is n-type and has a dependence upon oxygen partial pressure. The three... 

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