Hole hopping

Figure C3.2.15. Schematic diagram showing (A) electron hopping between electron reservoirs via empty states of an intervening bridge, (B) tunnelling, and (C) hole hopping via filled states of an intervening bridge. From...

Unlike a geometrical factor, the value of the factor

with composition in a predictable way. To illustrate this, suppose that stoichiometric MO2 is heated in a vacuum so that it loses oxygen. Initially, all cations are in the M4+ state, and we expect the material to be an insulator. Removal of O2- to the gas phase as oxygen causes electrons to be left in the crystal, which will be localized on cation sites to produce some M3+ cations. The oxide now has a few M3+ cations in the M4+ matrix, and thermal energy should allow electrons to hop from M3+ to M4+. Thus, the oxide should be an n-type semiconductor. The conductivity increases until

reduction continues, eventually almost all the ions will be in the M3+ state and only a few M4+ cations will remain. In this condition it is convenient to imagine holes hopping from site to site and the material will be a p-typc semiconductor. Eventually at x = 1.5, all cations will be in the M3+ state and M2C>3 is an insulator (Fig. 7.3). 

HT (hole transfer) processes, and by what mechanism would the charge transfer take place, superexchange or by a conduction-like mechanism with the electron or hole hopping between aromatic rings ... 

Recent experiments have demonstrated the operation of the hole hopping mechanism between G bases in DNA.145,481 In these experiments, Norrish I photocleavage of an acylated nucleoside in a syn-... 

The reader may notice that only saturated hydrocarbons (with a possible exception of CCI4) have been observed to yield rapidly migrating solvent holes. As mentioned above, part of this bias is explained by the fact that the holes are usually short-lived, so their dynamic properties are difficult to study. However, in many liquids (such as aromatic hydrocarbons and sc CO2), the solvent holes are relatively stable, yet no rapid hole hopping is observed. In such liquids, the solvent hole has a well-defined dimer cation core with strong binding between the two halves (in the first place, it is this dimerization that... 

It has been established from conductivity measurements that thermally activated and field-assisted hole hopping is responsible for the charge transport in solid polysilanes [48,49]. The mobility of the hole is as high as 10 m /V sec, while the mobility of the electron is a few orders of magnitude lower. In this section, we will show the reason why only the hole is mobile in polysilanes and how we can construct electron-conductive polysilanes. 

LaCrC>3 is one of the family of lanthanide perovskites RTO3, where R is a lanthanide and T is a period 4 transition element. In the cubic unit cell R occupies the cube corners, T the cube centre and O the face-centre positions. The coordination numbers of T and R are 6 and 8 respectively. LaCrC>3 loses chromium at high temperatures, leaving an excess of O2- ions. The excess charge is neutralized by the formation of Cr4+ which results in p-type semiconductivity with hole hopping via the localized 3d states of the Cr3+ and Cr4+ ions. The concentration of Cr4+ can be enhanced by the substitution of strontium for lanthanum. A 1 mol.% addition of SrO causes the conductivity to increase by a factor of approximately 10 (see Section 2.6.2). 

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