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Semiconducting alloys

Another prospective application of zinc oxide is the alloying with magnetic atoms like manganese, cobalt, or nickel to prepare diluted magnetic semiconducting alloys that are interesting as materials for spintronics, promising the possibility to use the spin of the electrons for electronic devices [176],... [Pg.28]

The above equations can be generalized to the case of disordered semiconducting alloys described by tight-binding models with several orbitals in the unit cell. In the literature the CPA tight-binding method has found wide applications in semiconducting alloys and in the important class of tunable gap compounds such as Hgi jjCdjjTe. [Pg.176]

When two semiconducting materials are fully miscible, a semiconducting alloy is obtained. Binary semiconducting alloys are scarce (SiC is a definite compound) and the best known (and used) is Gci The addition to ger-... [Pg.68]

A wide open series of solid solution systems, such as ionic alkali halides KCl j jBr binary and pseudobinary metallic or semiconducting alloys Ag—Cu AI—-Cu... [Pg.116]

It is of considerable scientific and practical interest to study the physical properties of solid solutions in the quasibinary system InSb-InAs, which have a comparatively narrow forbidden band. The nature of the changes with composition in the optical [1,2] and thermal [3,4] energy gap widths and in the effective mass of the electrons [5,6] have been studied previously. To study these semiconducting alloys furthfer, and particularly to ascertain the structural details of their energy bands, it is desirable to conduct investigations on doped specimens. [Pg.45]

SOME PROPERTIES OF SEMICONDUCTING ALLOYS LYING ALONG THE CuInTcg-CdTe LINE IN THE Cu-Cd-In-Te SYSTEM ... [Pg.66]

In only one case the RDFs of amorphous semiconducting alloys, namely a-MgBix and a-MgSbx films, have been interpreted tentatively by Ferrier and Herrell (1970) as being a mixture of very small crystallites of MgsX2 and of X, where X stands for Mg, Bi or Sb, depending on which of them is in excess. [Pg.82]

In the semiconducting alloys, on the other hand, ideality of structure, i.e., local satisfaction of valence requirements, implies that the connectivity of the network varies locally as the valence of the constituents vary. Thus, in addition to the translational disorder of the elements and compounds, there is compositional disorder at the nodes of the network and additional translational disorder associated with the randomness of connectivity. This increased disorder could broaden the tails until they overlap, (Cohen (1969)) as shown in Figure 3.5. Such overlapping may also be the case for some liquid semiconductors because of their reduced short-range order. The... [Pg.110]

Most vitreous covalent semiconducting alloys contain a Group VI element as a major constituent and thus are LP semiconductors. The density of states at the top of the LP valence band tails into the gap because of local energy fluctuations of the LP electrons. These occur because of the lack of long-range order but are enhanced with the presence of (i) dangling bonds, (ii) other chalcogens, and (iii) electropositive atoms. The conduction band tail is broadened by the presence in the alloy of weaker bonds. [Pg.226]

More interesting is the commonly encountered situation where an ion diffuses in a majority electronic conductor. Thus, diffusion in metallic and semiconducting alloys or of inserted species in transition metal oxides and chalcogenides fall into this category. Many electrode reactions are of this type. Lithium diffusion in j5-LiAl and other alloys is of interest in negative electrode reactions for advanced hthium batteries hydrogen and lithium diffusion in oxides (e.g. VeOn) and sulfides (e.g. TiSa) are of importance as positive electrode reactions for batteries and elec-trochromic devices. [Pg.59]

Shimakawa K (1981) On the compositional dependence of the optical gap in amorphous semiconducting alloys. J Non-Cryst Solids 43 229-244... [Pg.150]

The compounds by the atoms in the groups II-VI like ZnS, ZnSe, ZnTe, CdTe, HgSe, HgTe, CdS, CdSe, and MgTe also possess semiconductor proprieties. As in the case of the III-V compounds a large number of semiconducting alloys may also be realized from the II-IV compounds such as (Hg,Cd)Te, Zn(S,Se), Cd(S,Se), etc. [Pg.571]

Molecular Simulation Methods for Design of Semiconducting Alloys.332... [Pg.327]

MOLECULAR SIMULATION METHODS FOR DESIGN OF SEMICONDUCTING ALLOYS... [Pg.332]

The synthesis and growth of the compound semiconductors alloys have also been modelled using molecular dynamics simulations. Molecular dynamics techniques have been performed to study the formation and propagation of defects in these semiconducting alloys. [Pg.333]

We have studied the phase stability and the possible ordering in ferromagnetic semiconducting alloys (Ga,Mn)As on an ab initio level. The main conclusions of our study can be summarized as follows ... [Pg.96]


See other pages where Semiconducting alloys is mentioned: [Pg.5]    [Pg.541]    [Pg.1377]    [Pg.37]    [Pg.1376]    [Pg.43]    [Pg.145]    [Pg.321]    [Pg.385]    [Pg.20]    [Pg.457]    [Pg.458]    [Pg.854]   
See also in sourсe #XX -- [ Pg.68 , Pg.104 ]




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