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Scanning Auger electron microscopy

A new measurement technique, in-situ atomic force microscopy combined with XPS and scanning Auger electron microscopy and continuous argon sputtering, recently revealed that the films are not uni-... [Pg.484]

Figure 7.4 Schematic comparison of Auger peak intensity with other electrons escaped from a solid surface. E0 indicates energy of incident electrons. The kinetic energy of electrons can be divided into three regions I, II and III from low to high. (Reproduced with permission from M. Prutton and M.M. El Gomati, Scanning Auger Electron Microscopy, John Wiley Sons Ltd, Chichester. 2006 John Wiley Sons.)... Figure 7.4 Schematic comparison of Auger peak intensity with other electrons escaped from a solid surface. E0 indicates energy of incident electrons. The kinetic energy of electrons can be divided into three regions I, II and III from low to high. (Reproduced with permission from M. Prutton and M.M. El Gomati, Scanning Auger Electron Microscopy, John Wiley Sons Ltd, Chichester. 2006 John Wiley Sons.)...
Prutton, M. and El Gomati, M.M. (2006) Scanning Auger Electron Microscopy, John Wiley Sz Sons, Chichester. [Pg.223]

Prutton M, El Gomati M (eds) (2006) Scanning auger electron microscopy. Wiley, New York Radiogenic age and isotopic studies Report 1. Edi-tied by Geologic Survey of Canada Staff, National Research Council of Canada NRC Research, 1987 Ready RG (1996) Thermodynamics. Plenum Publishing Company, New York... [Pg.1236]

In recent development of the semiconductor industries, thermal oxide film thickness of less than 5 nm has been used in semiconductor devices such as metal-oxide-semiconductor (MOS) structures. Thickness of less than 5 nm is almost near the thickness of a native oxide film on the surface of silicon wafer. Therefore the characterization of ultra thin native oxide film is important in the semiconductor process technology. The secondary electron microscopy (SEM), the scanning Auger electron microscopy (SAM), the atomic force microscopy (AFM) and the X-ray photoelectron spectroscopy (XPS) might be the useful characterization method for the surface of the silicon wafers. [Pg.61]

Prutton M, El Gomati M (eds) (2006) Scanning Auger electron microscopy. Wiley, New York... [Pg.1014]

Figure 17.3.2 Detection limits, sampling depth, and spot size for several surface spectroscopic techniques. XRP (x-ray fluorescence) EMP (electron microprobe) EEL (electron energy loss), SAM (scanning Auger microprobe) STEM (scanning transmission electron microscopy). Other abbreviations in Figure 17.3.1. This figure is meant to provide a graphic summary of the relative capabilities of different methods modem instmments have somewhat better quantitative performance characteristics than the 1986 values given here. [From A. J. Bard, Integrated Chemical Systems, Wiley, New York, 1994, pp. 103, with permission adapted from Texas Instmments Materials Characterizations Capabilities, Texas Instmments, Richardson, TX, 1986, with permission.]... Figure 17.3.2 Detection limits, sampling depth, and spot size for several surface spectroscopic techniques. XRP (x-ray fluorescence) EMP (electron microprobe) EEL (electron energy loss), SAM (scanning Auger microprobe) STEM (scanning transmission electron microscopy). Other abbreviations in Figure 17.3.1. This figure is meant to provide a graphic summary of the relative capabilities of different methods modem instmments have somewhat better quantitative performance characteristics than the 1986 values given here. [From A. J. Bard, Integrated Chemical Systems, Wiley, New York, 1994, pp. 103, with permission adapted from Texas Instmments Materials Characterizations Capabilities, Texas Instmments, Richardson, TX, 1986, with permission.]...
X-Ray Fluorescence Spectrometry Terms associated with the broad technique of X-ray fluorescence spectrometry are electron spectrometry. X-ray spectrometry, electron microscopy, analytical electron microscopy, scanning transmission electron microscopy (STEM), electron diffraction, electron probe microanalysis. Auger electron spectrometry. X-ray photoelectron spec-... [Pg.1589]

LEED low-energy electron diffraction SAM scanning Auger microscope/microscopy... [Pg.1141]

Other surface analytical techniques, such as x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and secondary ion mass spectroscopy (SIMS) have been utilized to show that the elements of the titanium alloys are present in their surface oxides [78]. Transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) studies showed that the oxides of the Ti-6Al-4 V alloy have a more complex microstructure and a different crystallinity, which are properties that could affect the biocompatibility of these titanium alloy implants. [Pg.48]

The segregation of K to the surface has been demonstrated by chemisorption measurements [207,220], by scanning Auger electron spectroscopy [52,209-211], by X-ray photoelectron spectroscopy [208], and by electron microscopy [92]. Single crystal studies of K overlayers on Fe(l 10) demonstrate that K is not a structural promoter [221] and that K may even reduce the ability of A1 to disperse Fe [221]. [Pg.35]

The migration of K to the surface of the reduced catalyst [40] has been demonstrated by energy dispersive X-ray analysis [28], by field iron mass spectroscopy [222, 223], by chemisorption of CO, CO2, N2and H2 [207, 220] by scanning Auger electron spectroscopy [209-211], and by high-voltage electron microscopy [224]. [Pg.35]


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