Single-layer resist

Floch H.G., Belleville P.F., Scratch-resistant single-layer antireflective coating by a low-temperature sol-gel route, SPIE Proc. 1758, 135-150, (1992). 

The type of photoresist being used (e.g., positive-tone resist, negative-tone resist, diazonaphthoquinone-novolac resist, chemically amplified resist, single-layer resist, bilayer resist, etc.)... 

Material Shell carbon steel with 4-5 in. (10-12 cm) thick heavy weight, single-layer, cast-vibrated refractory with needles. Internals 304H stainless steel for temperature >1.200°F (650°C) and Grade H, % chrome for < ,200°F. Internal components exposed to catalyst should be refractory-lined for erosion resistance. Sliding surfaces should be hard-faced, minimum thickness in. (3 mm). 

As shown in Example 22-3, for solid particles of the same size in BMF, the form of the reactor model resulting from equation 22.2-13 depends on the kinetics model used for a single particle. For the SCM, this, in turn, depends on particle shape and the relative magnitudes of gas-film mass transfer resistance, ash-layer diffusion resistance and surface reaction rate. In some cases, as illustrated for cylindrical particles in Example 22-3(a) and (b), the reactor model can be expressed in explicit analytical form additional results are given for spherical particles by Levenspiel(1972, pp. 384-5). In other f l cases, it is convenient or even necessary, as in Example 22-3(c), to use a numerical pro-... 

Figure 6. SEM photograph of a 0.2 m wide pattern using an SPP single-layer resist. A 1.0 um thick SPP layer was exposed to X-rays In vacuum at 160 mJ/cm followed by a flood exposure and then dip-developed in a 0.8 wt% TMAH solution for 60 s at 25°C.

Application to Dry-Developed Single-Layer Deep-UV Resists... 

Figure 1. Gas phase functionalization scheme for single-layer resists.

A photooxidative scheme has been developed to pattern sub half-micron images in single layer resist schemes by photochemical generation of hydrophilic sites in hydrophobic polymers such as poly(styrene) and chlorinated poly(styrene) and by selective functionalization of these hydrophilic sites with TiCU followed by O2 RIE development. Sub half-micron features were resolved in 1-2 pm thick chlorinated poly(styrene) films with exposures at 248 nm on a KrF excimer laser stepper. The polymers are much more sensitive to 193 nm (sensitivity 3-32 mJ/cm2) than to 248 nm radiation (sensitivity -200 mJ/cm2) because of then-intense absorption at 193 nm. 

As for negative deep UV resist, O Toole et al. have exhibited half-micron pattern resolution in 0.5 micron film thickness using the new resist and PIE process (10). The pattern profiles, however, were re-entrant, due to the large photo absorption and the applications to single-layer-resist system have not been presented (11). 

We achieved high aspect ratio sub-half-micron pattern fabrication in 1.0 micron film thickness using this new resist. We are convinced that this new resist could make possible simple and efficient single-layer-resist system for KrF excimer laser lithography. 

Although the single-layer negative resists commonly utilized are simple, they typically do not resolve narrow (0.5 ftm) gaps between wide lines or pads due to proximity effects from backscatter from the substrate during electron beam (E-beam) exposure. Further, there are variations in linewidth which occur when images are written in a single-layer resist which overlies steps in the substrate. 

The typical properties of some commercial microporous membranes are summarized in Table 4. Celgard 2730 and Celgard 2400 are single layer PE and PP separators, respectively, while Celgard 2320 and 2325 are trilayer separators of 20 and 25 fim thickness. Asahi and Tonen separators are single layer PE separators made by the wet process. Basic properties, such as thickness, gurley, porosity, melt temperature, and ionic resistivity are reported in Table 4. These properties are defined in section 6.1.3. 

The separator resistance is usually characterized by cutting small pieces of separators from the finished material and then placing them between two blocking electrodes. The separators are completely saturated with the electrolyte. The resistance (Q) of the separator is measured at a certain frequency by ac impedance techniques. The frequency is chosen so that the separator impedance is equal to the separator resistance. To reduce the measurement error, it is best to do multiple measurements by adding extra layers. The average resistance of single layer is determined from multiple measurements. The specific resistivity, ps cm), of the separator saturated... 

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