Pattern fabrication

Figure 13.2 Fluorescence micrographs of DOPC multi-layer patterns fabricated by dip-pen nanolithography, (a) An array of 25 contiguous line features. Red color is from doped rhodamine-labeled lipid, (b) A higher magnification of the region highlighted by the white square in (a), (c) Two-component patterns containing two different dyes. Green color is from doped NBD-labeled lipid.

Figure 9 shows an SEM photograph of 0.6 micron down to 0.45 micron line-and-space patterns of the new resist in 1.0 micon film thickness exposed with KrF excimer laser stepper system (N.A. 0.36). The energy required for the pattern fabrication was only 50 mJ/cm2, and the development was done with a 60s immersion in 0.83% TMAH solution. High aspect ratio patterns of such thick resist films were successfully obtained using this resist. 

We achieved high aspect ratio sub-half-micron pattern fabrication in 1.0 micron film thickness using this new resist. We are convinced that this new resist could make possible simple and efficient single-layer-resist system for KrF excimer laser lithography. 

FIGURE 2.15 A microchannel system in abasketweave pattern fabricated by three PDMS layers, (a) Optical micrograph of the middle PDMS layer, which contains the entire 8 x 8 channel system. The channels are 100 pm wide and 70 pm high, (b) Optical micrograph of a portion of the enclosed, fluid-filled channels. Channels in the up-down direction are filled with a solution of fluorescein and channels in the left-right direction are filled with a solution of Meldola s Blue dye [180]. Reprinted with permission from the American Chemical Society. 

Denis, F. A., et al. (2004), Nanoscale chemical patterns fabricated by using colloidal lithography and self-assembled monolayers, Langmuir, 20, 9335-9339. 

Layers of plain fabric and patterned fabric are superimposed on one another. 

Pattern fabrication is an important issue in many fields ranging from microelectronics to biological microarray production and nanotechnology.64 Soft and probe lithography techniques such as microcontact printing (pCP) and dip-pen nanolithography (DPN) are frequently used to pattern surfaces.65 Conventional pCP is an efficient and... 

Morita, M. Imamura, S. Tamamura, T. Kogure, O. Murase, K. Direct pattern fabrication on silicon resin by vapor phase electron beam polymerization. J. Vac. Sci. Technol. B. 1983, 1 (4), 1171-1173. 

The different chemical natures of the exposed and unexposed areas can be used for polymer pattern fabrication using a silylation technique, e.g., vapor phase hexamethyldisilazane (HMDS) treatment of the polymer films (32). HMDS is well-known to react with acidic hydroxyl groups to yield sUylated products. Here, HMDS reacts with phenolic hydroxyl groups, carboxylic groups, and peroxide groups, as shown below ... 

Figure 1. Submicron pattern fabrication with FBM-G resist. Key a, 0.6-fxm chick resist patterns and b, after reactive ion beam etching of 0.6-fj.m thick SiC using C.F. The remaining resist thickness is about 0.15 fim.

Figure 5. Subm cron pattern fabrication with a-M-CMS.

Linear pattern fabricated by EnFACE on a copper substrate [31],... 

Jeong 2008) introduced the image analysis technique for finding the directions of warp and weft. He apphed the proposed method to some adorned fabrics like stripe, check, and dogtooth as well as imadomed fabrics of basic weaves to verify its efficiency and accuracy. (Kuo Su 2003) apphed gray relational analysis of the co-occurrence matrices to characterize the spatial properties of patterned fabric. However this approach is too sensitive to small variations of patterned texture and also requires intensive computation. 

Ngan, H. Y. T. Pang, G. K. H. 2006. Novel method for patterned fabric inspection using bollinger bands. Optical Engineering 45(8), 087202 1-15. 

Calixarenes are prospective candidates of materials for microelectronics. As electron resists, their small and round shape gives ultra-high resolution. Synthesis is comparatively easy starting from very inexpensive substances. Films of calixarenes were made with excellent quality, high heat resistivities and flat surfaces. Pattern fabrications are carried out easily with conventional processes. Thus, calixarene resists provide a practical means to fabricate nanos-tructures down to around 10 nm. It would be a great help to resarch and development of " mesoscopic devices . 

Chemically amplified resist system is a promising technology to attain hi resolution and high sensitivity for sub-quarter micron device fabrication. However, air-borne contamination (1-3), such as ammonia mainly generated from conventional adhesion promoter, hexamethyldisilazane (HMDS), severely affects this kind of resist. It causes surface insoluble layer of resist patterns, which results in failure of the pattern fabrication. 

Minimum dot patterns fabricated at the same e q>osure energy are similar with TMSP and HMDS (Fig.7), which agrees with the results of contact angles. 

Resist Pattern Profiles. Figure 8 shows 0.24 pi m line-and-space patterns fabricated in a resist on a Si substrate treated with TMSP or HMDS for 30 sec. at lOO C. Figure 9 shows 0.3 pi m line-and-space patterns fabricated in the resist on a TiN substrate. For TMSP, as same as for HMDS, hi aspect ratio and precise resist patterns were successfully achieved without any peeling off. 

Figure 7. Comparison of minimum dot resist patterns fabricated using TMSP and HMDS on various substrates (treatment time ...

Damask da-m9sk [ME damaske, ff. ML damascus, ff Damascus] (14c) n. A firm, glossy, Jacquard-patterned fabric that may be made from linen, cotton, rayon, silk, or a combination of these with various manufactured fibers. Similar to brocade, but flatter and reversible, damask is used for napkins, tablecloths, draperies, and upholstery. 

Examples of the patterns fabricated by this machine are a 40 nm-linewidth linear pattern (Fig. 1.28a), a high-aspect-ratio pattern (Fig. 1.28b), a pattern with a minimum linewidth of 22 nm realized by making high-resolution photoresist (Fig. 1.28c), two-dimensional arrays of rings and disks (Fig. 1.28d, e), and so on [53]. This machine has been made available for public use since April 2006. Examples of its use include the fabrication of a two-dimensional array of room-temperature operated nanophotonic NOT gates composed of InAs QDs (refer to Fig. 1.11), linear and curved Si optical waveguides, and so on. 

Fig. 1.28 Examples of patterns fabricated by the machine in Fig. 1.28. (a) A linear pattern of 40-nm width lines at 90-nm intervals, (b) High-aspect-ratio patterns with a half pitch of 32 nm. (c) The minimum linewidth (22 nm) of the linear patterns, (d) Two-dimensional array of lOO-nm diameter rings, (e) Two-dimensional array of disks with 125-nm pitch...

Fig. 5.3 Physical approaches for fabricating ID MNP arrays on surfaces, (a) MNPs are deposited or self-organized on the patterns fabricated with dip-pen nanoUthography. (b) ID MNP arrays of particles can be deposited on the substrate upon lifting through a stick-slip motion of the contact line, (c) Microwires of MNPs are assembled in an alternating electric field between two electrodes...

Pockets must be checked for shading, tacks, and placement. Crooked or uneven pockets are unacceptable. Pockets of a patterned fabric must line up according to the print. (A pocket set even slightly off can be very apparent when using a patterned fabric.)... 

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