Random access memory storage

There are two types of memory used in computers. The main memory is based on integrated circuit chips and all parts can be accessed with great rapidity and with equal ease. In mainframe computers this is known as the main store whilst in smaller computers, including microcomputers, it is called the random access memory (RAM). Some parts of RAM may be reserved for the storage of programs or data which are to be protected from change or accidental erasure. Such a reserved area of memory is called read only memory (ROM). ROM chips, sometimes called firmware, are often used in integrators and microcomputers dedicated to particular tasks. The... 

Capacitors are charge storage devices that are essential in many circuit families, including dynamic random access memory, DRAM, and RF chips. For example, in RF chips, capacitors occupy a large fraction (at present about 50 %) of the area of the... 

Catenane 404+ was also incorporated into a solid-state device that could be used for random access memory (RAM) storage.42 In addition, this compound could be employed for the construction of electrochromic systems, because its various redox states are characterized by different colors.41,43... 

Systems are equipped with read-only memory (ROM) lor the operating system and random-access memory (RAM) for storage of user-specific... 

Centralized High Performance Memory. A multiprocessor system of AFPs may share a common, high-performance random access memory store (HPR) between processors. All system HPR requests sent from the external memory access units (XMAU) of the AFP s are managed by the Storage Access Controller (SAC). Multiple SAC s may be employed as memory requirements are expanded. Each SAC is capable of transferring data to and from the AFP array at a sustained rate of 6.4 billion bits per second. 

Computer hardware Central Processing Unit (CPU), Random Access Memory (RAM), memory devices (hard disk, CD-ROM, etc ), storage devices, communication interfaces to equipment and other computer systems, operator terminals... 

The detector signals were then continuously monitored at 12 bits, 2 Hz, where the baseline values were updated for drift. If the signal-to-noise ratio of one channel exceeds 4, signal storage will commence. Now the full-scale resolution was 8 bits (0.4%) so that the detector noise was filtered out. Baseline offset correction was applied simultaneously. The sampling frequency could be chosen up to 59 Hz in the BASIC program, depending on the time required. However, there was a limit to the number of data points that could be stored in the available random access memory (RAH). 

The dynamic random access memory (DRAM) device, a two-element circuit, was invented by Dennard in 1967. The DRAM cell contains one MOSFET and one charge-storage capacitor. The MOSFET functions as a switch to charge or discharge the capacitor. Although a DRAM is volatile and consumes relatively high power, it is expected that DRAMs will continue to be the semiconductor memory of choice for nonportable electronic systems in the foreseeable future. ... 

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