Polysilicon thin-film transistors

Transparent glass-ceramics of the Si02-Al203-Li20 system are used to produce color filter substrates for polysilicon thin-film-transistor liquid crystal displays for laptop color PCs. Nippon Electric Glass Co., Ltd., Japan,... 

Cuscuna M, BonfigUetti A, Carluccio R, Mariucci L, Mectirini F, Pecora A, Stanizzi M, Valetta A, Fortunato G (2002) A novel fabrication process for polysilicon thin film transistors with source/drain contacts formed by deposition tmd lift-off of highly doped layers. Solid-State Elektron 46 1351-1358... 

Here, 41 indicates the thin film transistors, 51 the substrate, 43 a dielectric layer, 49 polysilicon gates, 50 gate electrodes, 55 contact plugs, 56 bottom electrodes, 53 the planarization layer, 54 the mercury cadmium telluride layer and 57 the top electrode layer. The planarization layer is formed from silicon oxide, silicon nitride, silicon oxide nitride or from a polyimide. The planarization layer may be formed as a double or triple layer. 

For high information-content displays, active-matrix (AM) pixel addressing provides improved display performance and reduced power consumption. In active matrix addressing each individual pixel is controlled by one or more thin-film transistors (TFTs). To date, most AM OLED displays have used polysilicon TFTs as the active elements, because they can provide sufficient current at low voltages and acceptable device dimensions, and they are capable of integrated drive electronics... 

Figure 5.2.1 shows a photograph of an integrated surface-micromachined accelerometer, and Figure 5.2.2 is a close-up of the surface-micromachined polysilicon MEMS structure near the center of Figure 5.2.1. The structural material is 3 pm thick polysilicon and the IC process is bipolar and CMOS (BiCMOS) with thin film resistors. This structure thus combines bipolar transistors, CMOS, precision laser-trimmed resistors, and mechanical polysilicon [4],...

The typical thin films that are deposited include semiconductors (e.g., polysilicon), insulators (e.g., silicon nitride), and metals (e.g., aluminum). In addition, some layers are grown (oxide), diffused, or implanted (dopants) rather than deposited using thin-film techniques. A cross section of a complementary metal oxide semiconductor (CMOS) process that includes six levels of metal is shown in Figure 1.2 [1]. A schematic diagram of one of the first MEMS devices, which used semiconductor processing for fabrication, the resonant gate transistor, is shown in Figure 1.3 [2]. 

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