PLD parameters

Table 7.3. Typical PLD parameters for epitaxial ZnO-based thin films, using an excimer laser LPX 305 (see Table 7.1), and the PLD chamber described in Table 7.2...

Fig. 7.22. Transfer of the chemical composition of Mn (top) and Li (bottom) from the PLD ZnO Mn and ZnO Li targets, respectively, into the thin films, for different target compositions and PLD gas pressures [65], Further variation of concentrations is due to different growth temperature and other PLD parameters. Li shows the largest scattering among all investigated dopant elements (see Table 7.7 and Fig. 7.23) due to the properties of the small Li atoms. Reprinted with permission from [65]...

Mn Magnetic hysteresis (SQUID), magnetic domains (MFM), luminescence (PL), PLD parameters of ferromagnetic ZnO Mn hlms, [77,78]... 

Suda Y, Kawasaki H, Ueda T, Ohshima T (2005) Preparation of nitrogen-doped titanium oxide thin film using a PLD method as parameters of target material and nitrogen concentration ratio in nitrogen/oxygen gas mixture. Thin Solid Films 475 337-341... 

Use an A1 mask to define an exact region and boundary between the chalcogenide glass area and Ta205. The parameters for the PLD process used in this experiment are shown in Table 6.1. 

Typical phonon mode broadening parameters for a set of ZnO thin films grown on silicon by PLD with varying oxygen partial pressure and/or substrate heater power are shown in Fig. 3.14. Heitsch et al. [30] observed that the... 

Fig. 3.14. Phonon mode broadening parameters, as determined by IRSE, vs. oxygen partial pressure for a set of PLD-grown ZnO thin films on (111) silicon. Triangles and squares represent data of thin films grown with substrate heater power of P = 400 W and P = 600 W, respectively. Reprinted with permission from [30]...

Fig. 3.15. Phonon mode broadening parameters of PLD-grown rocksalt-structure MgzZni-zO thin films on sapphire. Reprinted with permission from [74]...

Fig. 3.16. Experimental (dotted lines) and best-model calculated (solid lines) IRSE spectra of PLD-grown Ga-doped ZnO thin films on sapphire with different free-charge-carrier concentration and thickness parameters as indicated next to the respective graphs [43]. Spectra are shifted for clarity...

Fig. 3.18. Free-charge-carrier concentration (a,b) and mobility parameters (c,d) of Ga-doped ZnO thin films on sapphire vs. oxygen pressure during PLD-growth [43]. Triangles and circles correspond to the results determined by IRSE and Hail-effect measurements, respectively. Panels (a,c) and (b,d) contain the results of the films grown with 0.1 and 0.5 mass percent Ga2C>3 powder within the PLD target, respectively. Up- and down-triangles in panels (c) and (d) represent the anisotropic optical mobility parameter /inpt and respectively...

Fig. 3.20. Experimental (dotted lines) and best-model (solid lines) IRSE spectra of a PLD-grown Cu-doped ZnO thin film (d 1450 nm) on sapphire [43]. Panel (a) contains the best-model calculation, which is obtained by dividing the ZnO layer into two sublayers with different free-charge-carrier parameters, as sketched in the inset. The best-model free-charge-carrier parameters in sublayer J1 d 900nm) are N = (8.15 0.01) x 1018cm-3, //[ pt = (32.5 0.3)cm2 Vs-1, and /i° Pt = (29.9 0.4) cm2 V 1 s The free-charge-carrier concentration in sublayer j)2 [d 550 nm) is below the IRSE detection limit of (V 5 x 1017 cm-3. Panel (b) contains the best-model data, which are obtained by modeling the ZnO thin film as one homogeneous layer...

Table 7.1. Comparison of main parameters of an excimer laser Coherent Lambda Physik LPX305iF [32], and of a pulsed solid state Nd YAG laser Quantel YG981E [33], both suitable for research PLD systems...

The typical parameters for the PLD of epitaxial ZnO-based thin films on sapphire including information about target preparation are listed in Table 7.3. Within the range of these software controlled parameters, the properties of the deposited films differ widely, as will be shown in Sect. 7.4. Beside the parameters listed in Table 7.3, the film properties will be influenced furthermore by a few more internal effects, which will be listed and discussed in the following according to the scheme effect/problem-cause-solution. Only the careful consideration of all these hidden effects by experienced operators can ensure the highest quality and reproducibility of PLD grown films. 

It is quite obvious from the above that disorder of any kind will reduce the CDW or BOW responses and the PLD fluctuations. Consequently, T% will decrease and will eventually disappear for large enough disorder [69]. Defects will also pin the Frolich mode and produce phase and amplitude modulations in the order parameter. Impurities may ionize (dopants) and produce charged solitons and discommensurations [70]. The commensurability pinning will decrease, affecting the soliton energy and width, as does the umklapp pinning. 

A criterion was recently proposed by Ferrari and coworkers that relied on MMP9 and TIMPl (Tissue Inhibitor of Metalloproteinase 1) as biomarkers for the EPR effect to select patients amenable to treatment with nanomedidnes [164]. Using FDA-approved PEGylated Liposomal Doxorubidn (Doxil , PLD) as the model nanomedidne, they analyzed the prominent parameters governing PLD accumulation and anticancer activity... 

---