Semiconductors physical properties

Metallic and semiconductor nanoparticles or nanocrystals —chunks of matter intennediate in size and physical properties between single atoms and tire macroscopic bulk materials—are of great interest botli for tlieir... 

Temary and quaternary semiconductors are theoretically described by the virtual crystal approximation (VGA) [7], Within the VGA, ternary alloys with the composition AB are considered to contain two sublattices. One of them is occupied only by atoms A, the other is occupied by atoms B or G. The second sublattice consists of virtual atoms, represented by a weighted average of atoms B and G. Many physical properties of ternary alloys are then expressed as weighted linear combinations of the corresponding properties of the two binary compounds. For example, the lattice constant d dependence on composition is written as ... 

Physical Properties Electrical. Electrical properties have been the main focus of study of organic semiconductors, and conductivity studies on organic materials have led to the development of materials with extremely low resistivities and large anisotropies. A discussion of conductivity behaviors for various classes of compounds follows. 

Uses. The chemical inertness, thermal stability, low toxicity, and nonflammability of PFCs coupled with their unusual physical properties suggest many useflil applications. However, the high cost of raw materials and manufacture has limited commercial production to a few, small-volume products. Carbon tetrafluoride and hexafluoroethane are used for plasma, ion-beam, or sputter etching of semiconductor devices (17) (see loN implantation). Hexafluoroethane and octafluoropropane have some applications as dielectric gases, and perfluorocyclobutane is used in minor amounts as a dielectric fluid. Perfluoro-1,3-dimethyl cyclohexane is used as an inert, immersion coolant for electronic equipment, and perfluoro-2-methyldecatin is used for... 

Du Pont produces this polymer under the trade names of Kapton, Pyrafin, Vespel, and Pyre-ML. The trade names refer to polyimides used for film, semiconductor coatings, mol ding applications, and wire enamel, respectively. They have exceUent thermal, electrical, and physical properties. 

Table 1. Physical Properties of the Cubic Zincblende Structure III—V and II—VI Semiconductors...

The physical and thermodynamic properties of silane in the context of semiconductor appHcations have been reviewed in detail (8). Tabulations of properties of various silanes in the context of inorganic chemistry have also been pubHshed (9). Table 1 contains selected physical properties of inorganic silanes. 

The energy densities of laser beams which are conventionally used in the production of thin films is about 10 — 10 Jcm s and a typical subsU ate in the semiconductor industry is a material having a low drermal conductivity, and drerefore dre radiation which is absorbed by dre substrate is retained near to dre surface. Table 2.8 shows dre relevant physical properties of some typical substrate materials, which can be used in dre solution of Fourier s equation given above as a first approximation to dre real situation. 

In this chapter nonlinear piezoelectric and dielectric behavior shock-induced electrical conductance semiconductors elastic physical properties. 

Many metal sulfides have important physical properties.They range from insulators, through semiconductors to metallic conductors of electricity, and some are even superconductors. 

Thermal conductivity detector. The most important of the bulk physical property detectors is the thermal conductivity detector (TCD) which is a universal, non-destructive, concentration-sensitive detector. The TCD was one of the earliest routine detectors and thermal conductivity cells or katharometers are still widely used in gas chromatography. These detectors employ a heated metal filament or a thermistor (a semiconductor of fused metal oxides) to sense changes in the thermal conductivity of the carrier gas stream. Helium and hydrogen are the best carrier gases to use in conjunction with this type of detector since their thermal conductivities are much higher than any other gases on safety grounds helium is preferred because of its inertness. 

With respect to the physical properties mentioned, band-structure calculations have attracted considerable interest, e.g., for SbSBr, SbSI, and SbSel (234). For the compounds having reference 22i in column 4 of Table XXIX, a temperature-independent diamagnetism has been found, with values of about 10 cm" g between 77 and 340 K. A small temperature-dependence is exhibited by BiTel, a narrow-gap semiconductor (41). The anisotropy of the magnetic susceptibility has been studied for SbSI, BiSel, and BiTel (41, 420). 

Silicon wafer has been extensively used in the semiconductor industry. CMP of silicon is one of the key technologies to obtain a smooth, defect-free, and high reflecting silicon surfaces in microelectronic device patterning. Silicon surface qualities have a direct effect on physical properties, such as breakdown point, interface state, and minority carrier lifetime, etc. Cook et al. [54] considered the chemical processes involved in the polishing of glass and extended it to the polishing of silicon wafer. They presented the chemical process which occurs by the interaction of the silicon layer and the... 

Basic physical properties of sulfur, selenium, and tellurium are indicated in Table 1.3. Downward the sulfur sub-group, the metallic character increases from sulfur to polonium, so that whereas there exist various non-metallic allotropic states of elementary sulfur, only one allotropic form of selenium is (semi)metallic, and the (semi)metallic form of tellurium is the most common for this element. Polonium is a typical metal. Physically, this trend is reflected in the electrical properties of the elements oxygen and sulfur are insulators, selenium and tellurium behave as semiconductors, and polonium is a typical metallic conductor. The temperature coefficient of resistivity for S, Se, and Te is negative, which is usually considered... 

Extensive structural, optical, and electronic studies on the chalcopyrite semiconductors have been stimulated by the promising photovoltaic and photoelectrochem-ical properties of the copper-indium diselenide, CuInSe2, having a direct gap of about 1.0 eV, viz. close to optimal for terrestrial photovoltaics, and a high absorption coefficient which exceeds 10 cm . The physical properties of this and the other compounds of the family can be modulated to some extent by a slight deviation from stoichiometry. Thus, both anion and cation deficiencies may be tolerated, inducing, respectively, n- and p-type conductivities a p-type behavior would associate to either selenium excess or copper deficiency. 

The role of electronic theory of chemisorption in developing ideas on effects of adsorption on electrical and physical properties of semiconductor adsorbents. 

As a final comment on terminology, we note that elemental semiconductors are formed from a single element, e.g., Si or Ge, whereas compound semiconductors are formed from two binary), three ternary), four quaternary), or, rarely, more elements. Semiconductor alloys refer to solid solutions where either one anion or one cation can substitute for another, or possibly two or more such substitutions can occur for a binary semiconductor AB a simple alloy with C would be represented as Ai CjcB. Semiconductors are often classified by the group numbers in the periodic table. Thus, for example, I-VII semiconductors include Cul and AgBr, II-VI semiconductors include ZnS, CdTe, and HgTe, III-V semiconductors include GaAs, GaN, InP, and InSb, and IVx-VIv semiconductors include PbSe and Sn02. Fundamental physical properties are compiled in a recent handbook [22]. 

One-dimensional (ID) nanostructures have also been the focus of extensive studies because of their unique physical properties and potential to revolutionize broad areas of nanotechnology. First, ID nanostructures represent the smallest dimension structure that can efficiently transport electrical carriers and, thus, are ideally suited for the ubiquitous task of moving and routing charges (information) in nanoscale electronics and optoelectronics. Second, ID nanostructures can also exhibit a critical device function and thus can be exploited as both the wiring and device elements in architectures for functional nanosystems.20 In this regard, two material classes, carbon nanotubes2131 and semiconductor nanowires,32"42 have shown particular promise. 

The fundamental physical properties of nanowire materials can be improved even more to surpass their bulk counterpart using precisely engineered NW heterostructures. It has been recently demonstrated that Si/Ge/Si core/shell nanowires exhibit electron mobility surpassing that of state-of-the-art technology.46 Group III-V nitride core/shell NWs of multiple layers of epitaxial structures with atomically sharp interfaces have also been demonstrated with well-controlled and tunable optical and electronic properties.47,48 Together, the studies demonstrate that semiconductor nanowires represent one of the best-defined nanoscale building block classes, with well-controlled chemical composition, physical size, and superior electronic/optical properties, and therefore, that they are ideally suited for assembly of more complex functional systems. 

Binary compound semiconductors, physical properties of, 22 145, 146-147t, 149t, 150t... 

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