Nanowires semiconductor

Xu D, Chen D, Xu Y, Shi X, Guo G, Gui L, Tang Y (2000) Preparation of II-VI group semiconductor nanowire arrays by dc electrochemical deposition in porous aluminum oxide templates. Pure Appl Chem 72 127-135... 

Porous Membranes of Nanoparticies from Templating Against AAO Membranes Using LB Technique. AAO-porous substrate has broad applications in making metal and semiconductor nanowires, aligned mesostructured nanorods, inorganic nanotubes. 

Duan, X. 2007. Assembled semiconductor nanowire thin-films for high-performance flexible macroelectronics. MRS Bull. 32 134-141. 

The approaches used for preparation of inorganic nanomaterials can be divided into two broad categories solution-phase colloidal synthesis and gas-phase synthesis. Metal and semiconductor nanoparticles are usually synthesized via solution-phase colloidal techniques,4,913 whereas high-temperature gas-phase processes like chemical vapor deposition (CVD), pulsed laser deposition (PLD), and vapor transfer are widely used for synthesis of high-quality semiconductor nanowires and carbon nanotubes.6,7 Such division reflects only the current research bias, as promising routes to metallic nanoparticles are also available based on vapor condensation14 and colloidal syntheses of high-quality semiconductor nanowires.15... 

Figure 10.2. Vapor-liquid-solid growth of semiconductor nanowires.

Gudiksen, M. S. Wang, J. Lieber, C. M. 2001. Synthetic control of the diameter and length of single crystal semiconductor nanowires. J. Phys. Chem. B 105 4062 1064. 

Duan, X. Niu, C. Sahi, V. Chen, J. Parce, J. W. Empedocles, S. Goldman, J. L. 2003. High-performance thin-film transistors using semiconductor nanowires and nanoribbons. Nature 425 274-278. 

One-dimensional (ID) nanostructures have also been the focus of extensive studies because of their unique physical properties and potential to revolutionize broad areas of nanotechnology. First, ID nanostructures represent the smallest dimension structure that can efficiently transport electrical carriers and, thus, are ideally suited for the ubiquitous task of moving and routing charges (information) in nanoscale electronics and optoelectronics. Second, ID nanostructures can also exhibit a critical device function and thus can be exploited as both the wiring and device elements in architectures for functional nanosystems.20 In this regard, two material classes, carbon nanotubes2131 and semiconductor nanowires,32"42 have shown particular promise. 

The fundamental physical properties of nanowire materials can be improved even more to surpass their bulk counterpart using precisely engineered NW heterostructures. It has been recently demonstrated that Si/Ge/Si core/shell nanowires exhibit electron mobility surpassing that of state-of-the-art technology.46 Group III-V nitride core/shell NWs of multiple layers of epitaxial structures with atomically sharp interfaces have also been demonstrated with well-controlled and tunable optical and electronic properties.47,48 Together, the studies demonstrate that semiconductor nanowires represent one of the best-defined nanoscale building block classes, with well-controlled chemical composition, physical size, and superior electronic/optical properties, and therefore, that they are ideally suited for assembly of more complex functional systems. 

Duan, X. Lieber, C. M. 2005. Semiconductor nanowires Rational synthesis. In Dekker Encyclopedia of Nanoscience and Nanotechnology, edited by Schwarz J. A., Marcel Dekker, Inc., New York. 

Morales, A. M. Lieber, C. M. 1998. A laser ablation method for the synthesis of crystalline semiconductor nanowires. Science 279 208-211. 

Solution-Liquid-Solid (SLS) growth of semiconductor nanowires by Wang etal. (2006). The synthesis proceeds by a solution-based catalysed growth mechanism in which nanometer-scale metallic droplets catalyse the decomposition of metallo-organic precursors and crystalline nanowire growth. 

Duan, X., and Lieber, C. M., General synthesis of compound semiconductor nanowires. Adv. Mater. 12,298 (2000). 

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