Oxygen etching

Khanna et al. [136] proposed a mechanism of the reactions of aluminum based clusters with O, which lends a physical interpretation as to why the HOMO-LUMO gap of the clusters successfully predicts the oxygen etching behaviors. The importance of the HOMO-LUMO gap strongly suggests that the reactions of the metal clusters belong to the pseudoexcitation band. 

A photoresist pattern was deposited on a nonlinear diazo dye film and then oxygen etched to form a line of nonlinear and linear sections with a 32 pm QPM period. The upper surface was then planarized with a UV cured resin. A raised QPM +/0 channel waveguide was then formed with three more processing steps [104]. Despite the complexity of the fabrication, losses were below 3 dB cm 1 at 1.59 pm and a maximum SHG figure of merit of 4x10 % W 1 cm 2 was obtained [105,106]. 

The direct reaction of carbon as graphite or activated carbon [221, 222] with NO in the presence of excess oxygen is a high-temperature process operating with full NO conversion only at about 875 K. The parallel course of the activation curve for NO removal and for oxidation is taken as indication [224] that oxygen etches active sites into the carbon which decompose NO. 

Figure 10. Electron microphotograph of particles of acrylate latexes after oxygen etching. Magnification X127.500...

The incorporation of silicon into resist systems has been shown to effectively instill oxygen etching resistance while maintaining lighographic utility. 

Curves obtained by plotting the decrease of film thickness after MO min exposure to Op-RIE as a function of weight ratio of GR-950 blended OFPR-800 are shown in Fig.9. The oxygen etching rates of... 

Poly (2-methyl-1-pentene sulfone) may be used as a dissolution inhibitor to effect e-beam sensitivity (38). Trimethylsilylalkoxyphenol is another monomer that has been used in the preparation of oxygen-etching-resistant no-volacs for resist applications (39). For all of the novolac-based systems studied to date, the hydrophobic nature of the silicon moiety limits the incorporation of silicon to —10 wt %. However, this level is sufficient to allow use of these resins as oxygen RIE masks. 

Fig. 12. Electron micrographs of polystyrene latex particles (A) before etching and (B) after oxygen etching.

The size of primaiy particles is different for different latexes they decrease with increasing polymer phase polarity (Fig. IS). Data of af rox imate calculation of sizes of primary particles, the number of tnacromole-cules in them, and tbe content of primary panicles in particles of tbe resultant latex are given in Table VIII data for a hotyl methacrylate latex synthesized under similar conditions wherein primary particles were not revealed by the same oxygen etching method are also presented in (his table,... 

Fig.14. Electron micrographs of pol acrylate latex particles (Table VII. run 3) after oxygen etching for (A) 2 min (B) 10 min and (C) 20 min.

Figure 3a. Polymer deposited by photoinitiated cationic interfacial polymerization prior to oxygen etching.

The solidified catalyst particle collides with the molten catalyst particle. Oxygen etches the cap and prevents MWCNT growth by oxidising precipitating caibon. 

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