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Silicon-containing resists

Structural representation of select, positive and negative silicon containing resist systems. [Pg.148]

TAGAWA Main Reactions of Chlorine- and Silicon-Containing Resists... [Pg.39]

This property has been widely utilized, and many kinds of silicon-containing resists have been reported as a result. Most of the new resists developed use silicon containing novolac resins with a sensitizer(4)(5). [Pg.212]

Positive working silicon-containing resist with 0.8 jum resolution and O2 RIE selectivity greater than five was used for fine via hole formation in a polyimide film by O2 RIE process. [Pg.554]

Figure 1.5. Surface passivation of silicon-containing resists in an oxygen... Figure 1.5. Surface passivation of silicon-containing resists in an oxygen...
Ohnishi, M. Suzuki, K. Saigo, Y. Saotome, and H. Gokan, Silicon containing resists for hi layer resist systems, Proc. SPIE, 539, 62 (1985). [Pg.393]

Damascene applications involving silicon-containing resists and silicon-containing hard mask materials with antireflection properties... [Pg.437]

The advantageous properties of these spin-on silicon-containing resists and hard mask materials with antireflection properties make these materials ideal candidates for dual damascene applications (see Fig. 9.10). They offer advantages over the conventional materials because they have better etch selectivity to the resists they also tend not to suffer from the residue issues during etch and removal associated with conventional approaches. They now dominate in these applications, although spin-on carbon hard masks are emerging as worthwhile alternatives. ... [Pg.437]

Figure 1.6 Example of 40 nm wide lines etched 120 nm deep in silicon using a silicon-containing resist, before removing the resist residue. Figure 1.6 Example of 40 nm wide lines etched 120 nm deep in silicon using a silicon-containing resist, before removing the resist residue.
Figure 1.7 Examples of silicon etched with different UV-N It resists in exactly the same conditions (a) purely organic resist (b) silicon-containing resist (c) perfluorinated resist. Figure 1.7 Examples of silicon etched with different UV-N It resists in exactly the same conditions (a) purely organic resist (b) silicon-containing resist (c) perfluorinated resist.
Silicon-Containing Resist Materials Based on Chemical Ampliflcation... [Pg.81]


See other pages where Silicon-containing resists is mentioned: [Pg.20]    [Pg.175]    [Pg.147]    [Pg.377]    [Pg.378]    [Pg.430]    [Pg.37]    [Pg.67]    [Pg.335]    [Pg.270]    [Pg.437]    [Pg.16]    [Pg.517]    [Pg.339]    [Pg.990]    [Pg.266]    [Pg.83]    [Pg.83]    [Pg.85]    [Pg.89]    [Pg.91]   
See also in sourсe #XX -- [ Pg.175 ]

See also in sourсe #XX -- [ Pg.369 , Pg.370 ]

See also in sourсe #XX -- [ Pg.38 ]




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