Oxidation potentials driving force

Another problem in the construction of tlrese devices, is that materials which do not play a direct part in the operation of the microchip must be introduced to ensure electrical contact between the elecuonic components, and to reduce the possibility of chemical interactions between the device components. The introduction of such materials usually requires an annealing phase in the construction of die device at a temperature as high as 600 K. As a result it is also most probable, especially in the case of the aluminium-silicon interface, that thin films of oxide exist between the various deposited films. Such a layer will act as a banier to inter-diffusion between the layers, and the transport of atoms from one layer to the next will be less than would be indicated by the chemical potential driving force. At pinholes in the AI2O3 layer, aluminium metal can reduce SiOa at isolated spots, and form the pits into the silicon which were observed in early devices. The introduction of a tlrin layer of platinum silicide between the silicon and aluminium layers reduces the pit formation. However, aluminium has a strong affinity for platinum, and so a layer of clrromium is placed between the silicide and aluminium to reduce the invasive interaction of aluminium. 

As described in the previous chapter on diffusion in metal oxides the driving force is given by the negative of the potential gradient. The force exerted on a charged particle of type i with charge Zie is given by... 

The driving force for migration is established by the different electrochemical potentials (AU) that exist at the two interfaces of the oxide. In other words, the electrochemical potential at the outer interface is controlled by the dominant redox species present in the electrolyte (e.g. O2). 

The potential of the reaction is given as = (cathodic — anodic reaction) = 0.337 — (—0.440) = +0.777 V. The positive value of the standard cell potential indicates that the reaction is spontaneous as written (see Electrochemical processing). In other words, at thermodynamic equihbrium the concentration of copper ion in the solution is very small. The standard cell potentials are, of course, only guides to be used in practice, as rarely are conditions sufftciendy controlled to be called standard. Other factors may alter the driving force of the reaction, eg, cementation using aluminum metal is usually quite anomalous. Aluminum tends to form a relatively inert oxide coating that can reduce actual cell potential. 

The process of formation of a passivating oxide film is an anodic one the driving force for its formation is raised by raising the potential anodically... 

The equilibrium (1) at the electrode surface will lie to the right, i.e. the reduction of O will occur if the electrode potential is set at a value more cathodic than E. Conversely, the oxidation of R would require the potential to be more anodic than F/ . Since the potential range in certain solvents can extend from — 3-0 V to + 3-5 V, the driving force for an oxidation or a reduction is of the order of 3 eV or 260 kJ moR and experience shows that this is sufficient for the oxidation and reduction of most organic compounds, including many which are resistant to chemical redox reagents. For example, the electrochemical oxidation of alkanes and alkenes to carbonium ions is possible in several systems... 

The ET reaction between aqueous oxidants and decamethylferrocene (DMFc), in both DCE and NB, has been studied over a wide range of conditions and shown to be a complex process [86]. The apparent potential-dependence of the ET rate constant was contrary to Butler-Volmer theory, when the interfacial potential drop at the ITIES was adjusted via the CIO4 concentration in the aqueous phase. The highest reaction rate was observed with the smallest concentration of CIO4 in the aqueous phase, which corresponded to the lowest driving force for the oxidation process. In contrast, the ET rate increased with driving force when this was adjusted via the redox potential of the aqueous oxidant. Moreover, a Butler-Volmer trend was found when TBA was used as the potential-determining ion, with an a value of 0.38 [86]. 

Allelopathic inhibition of mineral uptake results from alteration of cellular membrane functions in plant roots. Evidence that allelochemicals alter mineral absorption comes from studies showing changes in mineral concentration in plants that were grown in association with other plants, with debris from other plants, with leachates from other plants, or with specific allelochemicals. More conclusive experiments have shown that specific allelochemicals (phenolic acids and flavonoids) inhibit mineral absorption by excised plant roots. The physiological mechanism of action of these allelochemicals involves the disruption of normal membrane functions in plant cells. These allelochemicals can depolarize the electrical potential difference across membranes, a primary driving force for active absorption of mineral ions. Allelochemicals can also decrease the ATP content of cells by inhibiting electron transport and oxidative phosphorylation, which are two functions of mitochondrial membranes. In addition, allelochemicals can alter the permeability of membranes to mineral ions. Thus, lipophilic allelochemicals can alter mineral absorption by several mechanisms as the chemicals partition into or move through cellular membranes. Which mechanism predominates may depend upon the particular allelochemical, its concentration, and environmental conditions (especially pH). 

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