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Oxidation inverse

Figure C2.8.7. Principal oxide growth rate laws for low- and high-temperature oxidation inverse logarithmic, linear, paralinear and parabolic. Figure C2.8.7. Principal oxide growth rate laws for low- and high-temperature oxidation inverse logarithmic, linear, paralinear and parabolic.
These difficulties have stimulated the development of defined model catalysts better suited for fundamental studies (Fig. 15.2). Single crystals are the most well-defined model systems, and studies of their structure and interaction with gas molecules have explained the elementary steps of catalytic reactions, including surface relaxation/reconstruction, adsorbate bonding, structure sensitivity, defect reactivity, surface dynamics, etc. [2, 5-7]. Single crystals were also modified by overlayers of oxides ( inverse catalysts ) [8], metals, alkali, and carbon (Fig. 15.2). However, macroscopic (cm size) single crystals cannot mimic catalyst properties that are related to nanosized metal particles. The structural difference between a single-crystal surface and supported metal nanoparticles ( 1-10 nm in diameter) is typically referred to as a materials gap. Provided that nanoparticles exhibit only low Miller index facets (such as the cuboctahedral particles in Fig. 15.1 and 15.2), and assuming that the support material is inert, one could assume that the catalytic properties of a... [Pg.320]

Zhong et al. [64] have shown that the cell designed for fabricating colloidal crystals and their metal oxide inverse can also be used for the formation of... [Pg.110]

Ruckenstein and Sun [89] have used inverted emulsion polymerisation for the synthesis of PANI rubber composites using an isooctane-toluene mixture and water to form the emulsion and using ammonium persulfate as the oxidant. Inverse emulsion polymerisation consists of an aqueous solution of the monomer, which is emulsified in a non-polar organic solvent and the polymerisation is initiated with an oil-soluble initiator. The reaction is carried out in a heterogeneous system in which the reaction takes place in a large number of reaction loci dispersed in a continuous external phase. [Pg.113]

Some early observations on the catalytic oxidation of SO2 to SO3 on platinized asbestos catalysts led to the following observations (1) the rate was proportional to the SO2 pressure and was inversely proportional to the SO3 pressure (2) the apparent activation energy was 30 kcal/mol (3) the heats of adsorption for SO2, SO3, and O2 were 20, 25, and 30 kcal/mol, respectively. By using appropriate Langmuir equations, show that a possible explanation of the rate data is that there are two kinds of surfaces present, 5 and S2, and that the rate-determining step is... [Pg.741]

Figure Bl.22.4. Differential IR absorption spectra from a metal-oxide silicon field-effect transistor (MOSFET) as a fiinction of gate voltage (or inversion layer density, n, which is the parameter reported in the figure). Clear peaks are seen in these spectra for the 0-1, 0-2 and 0-3 inter-electric-field subband transitions that develop for charge carriers when confined to a narrow (<100 A) region near the oxide-semiconductor interface. The inset shows a schematic representation of the attenuated total reflection (ATR) arrangement used in these experiments. These data provide an example of the use of ATR IR spectroscopy for the probing of electronic states in semiconductor surfaces [44]-... Figure Bl.22.4. Differential IR absorption spectra from a metal-oxide silicon field-effect transistor (MOSFET) as a fiinction of gate voltage (or inversion layer density, n, which is the parameter reported in the figure). Clear peaks are seen in these spectra for the 0-1, 0-2 and 0-3 inter-electric-field subband transitions that develop for charge carriers when confined to a narrow (<100 A) region near the oxide-semiconductor interface. The inset shows a schematic representation of the attenuated total reflection (ATR) arrangement used in these experiments. These data provide an example of the use of ATR IR spectroscopy for the probing of electronic states in semiconductor surfaces [44]-...
The above rate law has been observed for many metals and alloys either anodically oxidized or exposed to oxidizing atmospheres at low to moderate temperatures—see e.g. [60]. It should be noted that a variety of different mechanisms of growth have been proposed (see e.g. [61, 62]) but they have in common that they result in either the inverse logaritlnnic or the direct logarithmic growth law. For many systems, the experimental data obtained up to now fit both growth laws equally well, and, hence, it is difficult to distinguish between them. [Pg.2724]

Formation of a Tr-allylpalladium complex 29 takes place by the oxidative addition of allylic compounds, typically allylic esters, to Pd(0). The rr-allylpal-ladium complex is a resonance form of ir-allylpalladium and a coordinated tt-bond. TT-Allylpalladium complex formation involves inversion of stereochemistry, and the attack of the soft carbon nucleophile on the 7r-allylpalladium complex is also inversion, resulting in overall retention of the stereochemistry. On the other hand, the attack of hard carbon nucleophiles is retention, and hence Overall inversion takes place by the reaction of the hard carbon nucleophiles. [Pg.15]

Convincing evidence for oxidative addition by inversion has been presented by the reaction of chiral (5)-( )-3-acetoxy-l-phenyl-1-butene (4) with Pd(0)(dppe), followed by the treatment with NaBF4 to give optically active the TT-allylpalladium complex (l/ ,25,35) 5 with 81% stereoselectivity[19]. [Pg.292]

Furthermore, the catalytic allylation of malonate with optically active (S)-( )-3-acetoxy-l-phenyl-1-butene (4) yields the (S)-( )-malonates 7 and 8 in a ratio of 92 8. Thus overall retention is observed in the catalytic reaction[23]. The intermediate complex 6 is formed by inversion. Then in the catalytic reaction of (5 )-(Z)-3-acetoxy-l-phenyl-l-butene (9) with malonate, the oxidative addition generates the complex 10, which has the sterically disfavored anti form. Then the n-a ir rearrangement (rotation) of the complex 10 moves the Pd from front to the rear side to give the favored syn complex 6, which has the same configuration as that from the (5 )-( )-acetate 4. Finally the (S)-( )-mal-onates 7 and 8 are obtained in a ratio of 90 10. Thus the reaction of (Z)-acetate 9 proceeds by inversion, n-a-ir rearrangement and inversion of configuration accompanied by Z to isomerization[24]. [Pg.293]

Epoxides and aziridines are also capable of electrophilic subsitution of indoles. Indolylmagncsium bromide and cyclohexene oxide react to give 3-(lrans-2-hydroxycyclohexyl)indole[14]. Reaction of indoles with epoxides also occurs in the presence of Lewis acids. For example, indole reacts with methyl 2S,3R-epoxybutanoate at C3 with inversion of configuration[15]. [Pg.106]

These ion lasers are very inefficient, partly because energy is required first to ionize the atom and then to produce the population inversion. This inefficiency leads to a serious problem of heat dissipation, which is partly solved by using a plasma tube, in which a low-voltage high-current discharge is created in the Ar or Kr gas, made from beryllium oxide, BeO, which is an efficient heat conductor. Water cooling of the tube is also necessary. [Pg.354]

Materials that typify thermoresponsive behavior are polyethylene—poly (ethylene glycol) copolymers that are used to functionalize the surfaces of polyethylene films (smart surfaces) (20). When the copolymer is immersed in water, the poly(ethylene glycol) functionaUties at the surfaces have solvation behavior similar to poly(ethylene glycol) itself. The abiUty to design a smart surface in these cases is based on the observed behavior of inverse temperature-dependent solubiUty of poly(alkene oxide)s in water. The behavior is used to produce surface-modified polymers that reversibly change their hydrophilicity and solvation with changes in temperatures. Similar behaviors have been observed as a function of changes in pH (21—24). [Pg.250]

The rate (kinetics) and the completeness (fraction dissolved) of oxide fuel dissolution is an inverse function of fuel bum-up (16—18). This phenomenon becomes a significant concern in the dissolution of high bum-up MO fuels (19). The insoluble soHds are removed from the dissolver solution by either filtration or centrifugation prior to solvent extraction. Both financial considerations and the need for safeguards make accounting for the fissile content of the insoluble soHds an important challenge for the commercial reprocessor. If hydrofluoric acid is required to assist in the dissolution, the excess fluoride ion must be complexed with aluminum nitrate to minimize corrosion to the stainless steel used throughout the facility. Also, uranium fluoride complexes are inextractable and formation of them needs to be prevented. [Pg.204]

Tempera.ture Effect. Near the boiling point of water, the solubiUty—temperature relationship undergoes an abmpt inversion. Over a narrow temperature range, solutions become cloudy and the polymer precipitates the polymer caimot dissolve in water above this precipitation temperature. In Figure 4, this limit or cloud point is shown as a function of polymer concentration for poly(ethylene oxide) of 2 x 10 molecular weight. [Pg.339]

Solubility. PPO polyols with a molecular weight below 700 are water soluble. The triol is slightly more water soluble than the diol. The solubihty in water decreases with increasing temperature. This inverse solubiUty causes a cloud point which is important in characteri2ing copolymers of propylene oxide and ethylene oxide. [Pg.354]

Fig. 5. NMOS capacitance voltage characteristics where C is the oxide capacitance, A shows low frequency characteristics, and B shows high frequency characteristics. At low frequencies C approaches C for negative voltages (accumulation) and positive voltages (inversion). In the flat-band (FB) condition there is no voltage difference between the semiconductor s surface and bulk. The threshold voltage, Dp for channel formation is the point where the... Fig. 5. NMOS capacitance voltage characteristics where C is the oxide capacitance, A shows low frequency characteristics, and B shows high frequency characteristics. At low frequencies C approaches C for negative voltages (accumulation) and positive voltages (inversion). In the flat-band (FB) condition there is no voltage difference between the semiconductor s surface and bulk. The threshold voltage, Dp for channel formation is the point where the...

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See also in sourсe #XX -- [ Pg.486 , Pg.488 ]




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Oxidative addition with inversion

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