Organic vapour phase deposition

Abstract. Copper phthalocyanine (CuPc)-fullerene (C60) photovoltaic cells are produced by organic vapour phase deposition reaching efficiencies of 3%. The electronic transport properties of the devices are investigated as a function of the CuPc C60 absorber blend layer composition and its preparation temperature. The analysis of the transport properties of the devices employs the one-diode model. It is shown that the dominant recombination process takes place at the donor-acceptor interfaces of the CuPc and C60 absorber domains. The activation energy of recombination is related to the effective band gap of the blend layer. 

ITO/PEDOT PSS/CuPc C6o/Mg/Ag organic solar cells were fabricated on ITO (5 Q/squarc sheet resistance)-coated glass substrates. After solvent cleaning, the ITO/glass substrates were spin-coated by a PEDOT PSS layer and immediately transferred into the deposition chamber. A 70 nm-thick CuPc C60 blend layer was prepared by organic vapour phase deposition (OVPD ) [2, 3], The Mg/Ag back contacts were deposited by thermal evaporation in high vacuum (p 10 7 mbar) on non-air-exposed absorber surfaces. The device preparation details can be found elsewhere [4], The compositional and substrate temperature (Tsubstrate) investigations are carried out on type A and B devices with nonoptimised and optimised contacts, respectively. 

The mechanical properties of materials involve various concepts such as hardness, shear and bulk modulus. The group III nitrides are now mostly used as fihns or layers grown by metal organic vapour phase epitaxy (MOVPE) or molecular beam epitaxy (MBE) on sapphire, GaAs or SiC. The lattice parameters of the substrate do not generally match those of the deposited layer, and therefore, stresses appear at the interface and in the layer and modify its physical properties. Hence, it is necessary to have a good knowledge of these properties. 

MBE MEIS MESFET MINDO MIS MOCVD MOMBE MOS MOSFET MOVPE molecular beam epitaxy medium energy ion scattering metal semiconductor field effect transistor modified intermediate neglect of differential overlap metal-insulator-semiconductor metal-organic chemical vapour deposition metal-organic molecular beam epitaxy metal-oxide-semiconductor metal-oxide-semiconductor field effect transistor metal-organic vapour phase epitaxy... 

Since 1980, interest in organometallic compounds of Ga, In and T1 has grown, mainly because of their potential use as precursors to semiconducting materials such as GaAs and InP. Volatile compounds can be used in the growth of thin films by MOCVD metal organic chemical vapour deposition) or MOVPE metal organic vapour phase epitaxy)... 

In chemical vapor deposition (CVD) reactive vapor precursors react to produce solid materials in the gas phase or at the solid-gas interface on the substrate surface at appropriate temperatures. Typical precursors used in the CVD process are metal hydrides, metal chlorides, and metal organic compounds. In the case that the precursor species are metal organic compounds, the process is called metal-organic chemical vapor deposition (MOCVD). The precursor molecules are introduced into a reactor sometimes with a carrier gas and decompose by means of heat, irradiation of UV light, or electrical plasma formed in the gas. Thermal CVD is the most commonly used method. This technique has an advantage that refractory materials can be vapour-deposited at relatively low temperatures,... 

Other processes investigated for planar SOFC fabrication include electrostatic-assisted vapour deposition, vapour phase electrolytic deposition, vacuum evaporation, laser spraying, transfer printing, sedimentation method, and plasma metal organic chemical vapour deposition. 

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