MOCVD metal-organic chemical vapour

MOCVD Metal-organic chemical vapour deposition... 

MOCVD metal organic chemical vapour deposition MBE molecule beam epitaxy P value is reduced by a factor of 2.8 to take into account the tablet porosity Calculated in this work from experimental data presented in original publications... 

Since 1980, interest in organometallic compounds of Ga, In and T1 has grown, mainly because of their potential use as precursors to semiconducting materials such as GaAs and InP. Volatile compounds can be used in the growth of thin films by MOCVD metal organic chemical vapour deposition) or MOVPE metal organic vapour phase epitaxy)... 

L total (resultant) orbital quantum number MOCVD metal-organic chemical vapour deposition... 

Singh HB, Sudha N (1996) OrganoteUurium precursors for metal organic chemical vapour deposition (MOCVD) of mercury cadmium telluride (MCT). Polyhedron 15(5-6), 745-763... 

The assumption of equilibrium which is implicit in EQN (1) is expected to be satisfied at the high temperatures at which metal-organic chemical vapour deposition (MOCVD) growth of nitrides is carried out. At lower temperatures, such as those used in molecular-beam epitaxy (MBE), deviations from equilibrium may occur. 

Ce(R CO.CH.CO.R )3 are readily oxidized (O2) to Ce(R CO.CH.CO.R )4, such as Ce(acac)4(R = R = Me), Ce(dbm)4(R = R = Ph), and Ce(tmhd)4 (R = R = Mc3C), generally found to have square antiprismatic structures, though Ce(tmhd)4 is closer to dodecahedral. These are volatile dark red solids that are soluble in solvents such as benzene and chloroform they are volatile, with vapour pressures high enough for Metal Organic Chemical Vapour Deposition (MOCVD) use, whilst they have also been studied as possible alternatives to lead compounds for petrol additives. 

Some years ago the thermolysis of organopnictogens was considered an esoteric subject of limited interest. The topic has been transformed into one of the growth points of hetero-organic chemistry because of the enormous economic potential of metal organic chemical vapour deposition (MOCVD) processes for the production of III-V type of... 

The bis-Cp titanium bis(/-butanethiolato) and bis(ethanethiolato) complexes have been used as a single-source precursors for the preparation of thin films of titanium sulfides by metal-organic chemical vapour deposition (MOCVD). The crystal and molecular structures of the precursor complexes have been determined for comparison with homologous complexes of the general formula Cp2Ti(SR)2.1618... 

A few compounds have been studied for other reasons. These include trimethylaluminium [64] and trimethylgallium [65] which are of interest because of their use in metal organic chemical vapour deposition (MOCVD) processes. The compounds were also studied because the interactions between methyl groups in the same molecule are a continuing source of fascination. Tetramethyltin was studied for the same reason [66]. 

Chemical vapour deposition (CVD) is the delivery (by uniform mass transport) of a volatile precursor or precursors to a heated surface on which reaction takes place to deposit a thin film of the solid product the surface must be hot enough to permit reaction but cool enough to allow solid deposition. Multilayer deposition is also possible. Metal-organic chemical vapour deposition (MOCVD) refers specifically to use of metal-organic precursors. 

MBE MEIS MESFET MINDO MIS MOCVD MOMBE MOS MOSFET MOVPE molecular beam epitaxy medium energy ion scattering metal semiconductor field effect transistor modified intermediate neglect of differential overlap metal-insulator-semiconductor metal-organic chemical vapour deposition metal-organic molecular beam epitaxy metal-oxide-semiconductor metal-oxide-semiconductor field effect transistor metal-organic vapour phase epitaxy... 

Metal-organic chemical vapour deposition (MOCVD) refers specifically to use of metal-organic precursors. 

---