Interface dielectric

Electromagnetic field of a surface plasmon is confined at the metal-dielectric interface and decreases exponentially into both media, Figure 6. 

The theoretical analysis of a radiating dipole at a dielectric interface is quite involved and its full description is beyond the scope of this chapter. Instead, an outline of the most salient features of the model is presented. The complete analysis can be found in Ref. 25. 

R8. Rose, G. S., and Ward, S. G., Contact electrification across metal-dielectric and dielectric-dielectric interfaces, Brit. J. Appl. Phys. 8, 121 (1957). 

In these time-resolved studies, a simplified, non-normalized theory [i.e., effectively lacking the division by PT in Eq. (7.34)] was used for comparison with the experimental results, so that the observed fluorescence from any region was assumed to be proportional to the local evanescent intensity in that region. A more precise analysis must take into account that distance from the interface affects the angular distribution of emission and that fluorescence lifetimes are necessarily affected by the proximity of the dielectric interface. 

N. L. Thompson and T. P. Burghardt, Total internal reflection fluorescence Measurement of spatial and orientation distributions of fluorophores near planar dielectric interfaces, Biophys. Chem. 25, 91-97 (1986). 

T. P. Burghardt and N. L. Thompson, Effect of planar dielectric interfaces on fluorescence emission and detection Evanescent excitation with high aperture collection, Biophys. J. 46, 729-737 (1984). 

K. H. Drexhage, Influence of a dielectric interface on fluorescence decay time, J. Lumin. 12, 693-701 (1970). 

Complementary information about molecular species can be obtained by examination of emission spectra and careful consideration of the perturbations introduced by the presence of a dielectric interface. 

G. R. Hadley, High-accuracy finite-difference equations for dielectric waveguide analysis I uniform regions and dielectric interfaces. Journal of Lightwave Technology 2ft, 1210-1218 (2002). 

Thin films of an amorphous-composite In/InO, which contain a metal-dielectric interface, have been studied (12)(13) and found to superconduct when the electron carrier density reaches a value of approximately 1020cm-3. This system, having a Tc of 2.5 to 3.2 K, has been described as exhibiting "interface-dominated superconductivity". 

Dielectric response data were taken on a Czochralski-grown very pure crystals of sisniCc (size 0.5 x 5 x 5 mm3) with probing electric-field amplitudes of 200 V/m applied along the polar c axis. A wide frequency range, 10-5 < / < 106 Hz, was supplied by a Solartron 1260 impedance analyzer with a 1296 dielectric interface. Different temperatures were chosen both... 

The advantage of the IEF-PCM formulation in this respect is that the surface between the two dielectrics is hidden within the Green s function and only the explicit description of the molecular cavity is needed as for bulk IEF-PCM. Although the IEF-PCM implementation was able to overcome several numerical problems as a result of the explicit description of the dielectric interface, the BEM discretization technique for those tesserae in close proximity of the sharp interface could still potentially lead to unphysical divergences. 

Some improvement was observed with pentacene deposited on top of silane layers, but it was also observed that the silane deposition is not easy to control, and side-reactions often result in rough layers with considerable unreacted content remaining. An alternative approach relies on application of self-assembled monolayers which mimic vapor-deposited silanes [32, 33] on the dielectric interface of the organic devices. Figure 2.6 shows an overview of the different surface-treatment application methods discussed in this section. 

In order to treat the combined effects of added salt and dielectric boundaries on a manageable level, we use screened Debye-Hiickel (DH) interactions between all charges. In the presence of a dielectric interface, the Green s function can in general not be calculated in closed form [114] except for (i) a metallic substrate (with a substrate dielectric constant e =oo) and (ii) for e =0 (which is a fairly accurate approximation for a substrate with a low dielectric constant). For two unit charges at positions r and r one obtains for the total electrostatic interaction including screening and dielectric boundary effects... 

Fig. 24 A straight PE chain consisting of N dissociable monomers is placed parallel at a distance D to a dielectric interface...

In the present simplified model, we neglect conformational degrees of freedom of the PE and assume a straight polymer consisting of N monomers with a bond length (i.e. distance between dissociable groups) a, located at a distance D from a dielectric interface, as is depicted in Fig. 24. This model is applicable to stiff PEs and for strongly adsorbed PEs, since they are indeed flat. The exact partition function reads... 

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