Organic CVD MOCVD

Metallo-organic CVD (MOCVD) is a specialized area of CVD, which is a relatively newcomer, as its first reported use was in the 1960s for the deposition of indium phosphide and indium anti-monide. These early experiments demonstrated that deposition of critical semiconductor materials could be obtained at lower temperature than conventional thermal CVD and that epitaxial growth could be successfully achieved. The quality and complexity of the equipment and the diversity and purity of the precursor chemicals have steadily improved since then and MOCVD is now used on a large scale, particularly in semiconductor and opto-electronic applications.91P1 

Metallo-organics are compounds in which the atom of an element is bound to one or more carbon atoms of an organic hydrocarbon group. Many of the elements used in MOCVD are the metals of groups Ila, Ilb, Illb, IVb, Vb, and VIb, which are non-transitional. The metallo-organics thus complement the halides and carbonyls, which are the precursors for the deposition of transition metals (Groups IVa, Va, and Via) and their compounds. 

The term metallo-organic is used somewhat loosely in CVD parlance, since it includes compounds of elements, such as silicon, phosphorus, arsenic, selenium, and tellurium, that are not considered metallic. To conform to what appears to be a well-established tradition, such nonmetal compounds will be included here as metallo-organics. 

The equipment and chemicals used in MOCVD are all available commercially but are expensive and production cost is high. For these reasons, MOCVD is considered in applications where high quality is essential. 

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Two maj or contributors to this rapid growth are plasma CVD and metallo-organic CVD (MOCVD). Both are extensively reviewed in this new edition. Likewise, the growing importance of CVD in the production of semiconductor and related applications is emphasized with a systematic and detailed analysis of the role of CVD in this field. 

Metallo-organic CVD (MOCVD) and plasma CVD are developing rapidly, not only in the semiconductor-microelectronic area but also in hard coatingsfor erosion andwearapplicationssincethelower deposition temperature now permits the use of a broader spectrum of substrates. Special emphasis hasbeen given to these two areas in this second edition of the CVD Handbook (see Ch. 4 and 5). 

Metallo-organic CVD (MOCVD) is major area of CVD which is rapidly growing, particularly in semiconductor and optoelectronic applications. It is treated separately in Ch. 4. 

Metal carbonyls form a large and important group of compounds which are used widely in the chemical industry, particularly in the preparation of heterogeneous catalysts and as precursors in CVD and metallo-organic CVD (MOCVD). 

The transparent top contact is deposited last of all, which imposes restrictions on the process temperature. Thermally evaporated ITO and ZnO deposited by metal-organic CVD (MOCVD) are most suitable. At a typical thickness of 70 nm the ITO serves as a good antireflection coating as well. Due to the somewhat high sheet resistance, a metal (Ag) grid is necessary to reduce the series resistance [11]. 

Films at NASA GRC were deposited using homemade spray or aerosol-assisted chemical vapor deposition (AACVD) reactors to exploit the lower deposition temperature enabled by the simpler decomposition chemistry for the SSPs.6 9 AACVD is a simple and inexpensive process that offers the advantage of a uniform, large-area deposition, just like metal organic CVD (MOCVD), while also offering the low-temperature solution reservoir typical of spray pyrolysis methods. 

Before the metal-organic CVD (MOCVD) process of the BST film is discussed, the reasons for using the CVD process, despite its difficulties should be described. The storage node size of the capacitors in the current state-of-the-art DRAMs is about 0.15 x 0.35 x 1.0 pm with minimum spacing of about 0.15 pm between the nodes when the dielectric layer is a SiO/SijN bi-layer or Ta O, and the electrode materials are poly-Si. Here 1 pm is the height of the nodes. Even smaller lateral dimensions are expected when DRAMs use a BST thin film as the capacitor dielectric layer. Even though the BST films have a much smaller t value, which... 

Tremendous fundamental research especially in the CVD technologies and precursor synthesis extends the applicability to some new area. These technologies include metal-organic CVD (MOCVD), plasma-enhanced CVD, photo CVD and laser induced CVD etc. The advancement of the synthesis technology provides new precursors to deposit a variety of materials with high purity. 

In the first chapter of this book, an overview of CVD techniques has been given, and more detailed descriptions can be found in several textbooks [9, 10]. Many different CVD reactors have been used for the deposition of conducting films, i.e., thermal, UV-enhanced CVD (UVCVD), laser-assisted CVD (LACVD), plasma-enhanced CVD (PECVD) and metal-organic CVD (MOCVD). In addition, two techniques were included, which are not typically part of CVD, chemical transport and spray pyrolysis. 

Thermal Expansion Matching. The coefficients of thermal expansion (CTE) of coating and substrate should match as closely as possible. The CTE of the coating is usually lower than that of a metallic substrate and, upon cooling from the deposition temperature, thermal stresses are produced which may cause cracks and delamination. Such considerations have led to the development of low-temperature deposition processes such plasma-CVD or metallo-organic CVD (MOCVD) which minimizes these stresses and reduces the chance of coating failure (see Sec. 3.1).P1... 

Metallo-Organic CVD (MOCVD)I l It is possible to lower the deposition temperature of titanium carbide (i.e., 700°C) by using metallo-organic precursors such as ... 

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