Capacitor dielectrics

This is required to check the leakage of the capacitor dielectric during long operations. It is carried out by heating the unit uniformly on all sides, at least 20 C higher than the maximum ambient temperature of the capacitor unit, for at least 2 hours. There should be no leakage. 

Earlier applications as a capacitor dielectric and other electrical applications such as switch parts, cable connectors and co-axial cable spacers are now very limited. 

Poly(TV-vinylcarbazole) (PVK) is produced by the polymerization of IV-vinylcarbazole (LVI). PVK has been used as a capacitor dielectric since it has good electrical resistance over a... 

Poly-Mvinylcarbazolc is a stiff polymer with a high Tt (150 C). Because this polymer has excellent electric properties, it has been used as a capacitor dielectric. 

For the measurement of impedance or capacitance of the MIP material in sensing applications, this material is treated as a capacitor dielectric, which is placed between the electrode and electrolyte pseudo-plates. Any sorption or binding of the analyte disturbs the dielectric characteristics of the interface, which is... 

The equivalent circuit for a capacitor shown in Fig. 5.6 is more representative at high frequencies than those shown in Fig. 5.5, as it takes separate account of the resistance rel and the inductance L of the leads and electrodes and of losses in the capacitor dielectric (for the meaning of C = ef Co, see Section 2.7.2). 

The degradation of capacitor dielectrics has been discussed in general terms in Section 5.2.2 and 5.4.1. Here the topic is amplified with regard to titanium-containing oxides. Deterioration can occur under two different sets of conditions and most probably with differing mechanisms. 

In the conventional DRAM the capacitor dielectric is Si02 (er 5) or a combination of Si02 and Si3N4 ( ONO film) and is formed by controlled oxidation or nitridation of the silicon crystal. It is necessary for the memory capacitor to have a capacitance value of approximately 30 fF (i.e. 30xl0-15 F)... 

Before the metal-organic CVD (MOCVD) process of the BST film is discussed, the reasons for using the CVD process, despite its difficulties should be described. The storage node size of the capacitors in the current state-of-the-art DRAMs is about 0.15 x 0.35 x 1.0 pm with minimum spacing of about 0.15 pm between the nodes when the dielectric layer is a SiO/SijN bi-layer or Ta O, and the electrode materials are poly-Si. Here 1 pm is the height of the nodes. Even smaller lateral dimensions are expected when DRAMs use a BST thin film as the capacitor dielectric layer. Even though the BST films have a much smaller t value, which... 

BaO—AI2O3 Ti02—Si02 BaTit >3, cclsiane 3-6 Capacitor dielectrics ... 

Materials of this group serve mostly as capacitor dielectrics. The following properties are required for this application. 

This book is intended to provide a background and training suitable for application of impedance spectroscopy to a broad range of applications, such as corrosion, biomedical devices, semiconductors and solid-state devices, sensors, batteries, fuel cells, electrochemical capacitors, dielectric measurements, coatings, elec-trochromic materials, analytical chemistry, and imaging. The emphasis is on generally applicable fundamentals rather than on detailed treatment of applications. The reader is referred to other sources for discussion of specific applications of impedance. ... 

Used as paper impregnant in automobile capacitors (dielectrics). Electrical insulation and fire-resisting materials impreg-nants sealing compounds crankcase additive ingredient in penetrating oils plasticizer protective coatings. 

Kamiyama, S., Ando, K. and Watanabe, H. (1983) Trends in Capacitor Dielectrics for DRAMs. IEICE Trans. Electron., E76-C (11), 1564. 

Problems with gate/capacitor dielectric materials... 

I. Bum, Ceramic capacitor dielectrics, in Engineered Materials Handbook, Vol. 4 Ceramics and Glasses, ASM International, 1991, pp. 1112-1118. 

Beginning with the work by Ohno and Yonezawa on PFN-PFW systems in the late 1970s [8], many multicomponent dielectric systems have been evaluated and put into manufacture. Some of the patented compositions developed for multilayer capacitor (MLC) application were recently summarized by Shrout and Dougherty [9]. Other compositions were developed for piezoelectric sensors and electrostrictive actuator applications [10]. Most of the compositions used for capacitor dielectrics are based on PFN [8], PMN [11-14], or PZN [15]. 

We now turn our attention to the study of the thermodynamic properties of substances in an electrostatic field. In particular, we consider the case of a homogeneous, constant electric field such as exists between the plates of a parallel-plate capacitor, with neglect of edge effects. The system to be studied consists of the battery, capacitor, dielectric, and wires of Fig. 14-1. 

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