Optoelectronic switches

Dulic D, van der Molen SJ, Kudemac T, Jonkman HT, de Jong JJD, Bowden TN, van Esch J, Feringa BL, van Wees BJ (2003) One-way optoelectronic switching of photochromic molecules on gold. Phys Rev Lett 91 207402... 

S. A. Rice I think the first industrial applications of control techniques such as I have discussed will be for optoelectronic switching and, possibly, other optoelectronic devices. The use of control methods... 

Hebda M, Stochel G, Szacilowski K, Macyk W. Optoelectronic switches based on wide bandgap semiconductors. J Phys Chem B 2006 110 15275-83. 

Another approach to the organization of integrated optoelectronic switches is schematically detailed in Figure 7.13 it involves the organization of a photoisomerizable command interface on a solid support. A com-... 

Another approach to the organization of integrated optoelectronic switches is schematically detailed in Fig. 23, and involves the organization of a photoisomerizable command interface on the solid support [86]. The command surface controls the interfacial electron transfer to a solution-state redox species. In one photoisomeric state, electron transfer to a redox probe solubilized in the electrolyte solution is prohibited (e.g. by repulsive interactions), whereas in the complementary state of the monolayer the interfacial electron transfer is allowed (e.g. because of associative interactions). Various interactions, such as electrostatic interactions, host-guest or donor-acceptor interactions, contribute to the selective contacting of the redox probe to one state of the photoisomerizable monolayer. 

The third approach to the assembly of molecular optoelectronic switches is shown in Fig. 26, and involves the association of a chemically functionalized surface with a photoisomerizable guest. In configuration A of the molecular component, no affinity interactions with the modified surface exist, and the system is in a mute state. Photoisomerization of the substrate to state CB activates the affinity binding of the molecular component to the surface - a process that can be electronically transduced (e.g. to give an amperometric impedance or piezoelectric signal). 

The refractive indices of the azobenzene-modified polysilsesquioxane films in trans and cis conformations were measured. The differences between the refractive indices (A d = d,trans d,cis) are 0.007 and 0.009 for 4-tert-butylphenylazophe-nol and 4-phenylazophenol modified polysilsesquioxanes, respectively. We can expect that the photocontrolled refractive indices of the azobenzene-modified polysilsesquioxanes will have novel applications in optoelectronics, switching devices, optical waveguides, and holographic image records. 

Marsella, M.J. Wang, Z.Q. Mitchell, R.H. Backbone photochromic polymers containing the dimethyldihydro-pyrene moiety Toward optoelectronic switches. Org. Lett. 2000, 2, 2979. 

Instead of using SWNT networks, Borghetti and co-workers developed an optoelectronic switch and memory device, where they used the preselected semiconducting SWNTs as the conductive channel and polymers are coated on the device area. Due to the exclusion of metallic SWNTs in the charge... 

In today s high-tech society, information is increasingly transported through optical networks (optical fibres and optoelectronic switches) due to the recent developments in telecommunications. Vast amounts of data can be encoded and transported over large distances. However, it is becoming apparent that the use of electrical inputs to send optical signals cannot sustain the projected amount of information that will need to be transferred in the future (of the order of terabits-per-second). Therefore, to efficiently transport information via optical networks, a fully optical system is needed. 

Auston, D. (1975) Picosecond optoelectronic switching and gating in silicon. AppL Phys. Lett, 26 (3), 101-103. 

Quantum effects, such as resonant tunneling, enhanced carrier mobility (two-dimensional electron gas), bound states in the optical absorption spectrum, and nonlinear optical effects (e.g., intensity-dependent refractive indices) have been observed in semiconductor multiple quantum wells (2-4), Examples of devices based on these structures include tunnel diodes, fast optical and optoelectronic switches, high electron mobility transistors, and quantum well lasers. 

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