Multiple quantum well

Sun et al. [173] later investigated the mechanism of SE in the same MQW samples. They observed SE induced by both exciton-exdton scattering and EHP recombination. The exciton-based recombination mechanism of SE was studied further by measuring the temperature dependence of the SE peak position. It was observed that the exdton-exciton band has the same temperature dependence characteristics as that of a ZnO single layer, supporting the notion that this emission in ZnO/MgZnO MQWs is indeed due to exdton-exdton scattering. In addition, the measurements at 

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Effect of plasma-induced damage on electrical properties of InGaN/GaN multiple quantum well light-emitting diodes... 

D.S. Chemla, D.A.B. Miller, and P.W. Smith, Nonlinear Optical Properties of Multiple Quantum Well Structures for Optical Signal Processing... 

Y. Qiu, Y. Gao, P. Wei, and L. Wang, Organic light-emitting diodes with improved hole-electron balance by using copper phthalocyanine aromatic diamine multiple quantum wells, Appl. Phys. Lett., 80 2628-2630 (2002). 

Multiple linear regression methods, 16 753 Multiple-lined landfills, 25 877 Multiple liquid-path plates, 8 764 Multiple quantum well structure (MQW), 14 844... 

Chem, G.D., Tureci, H.E., Stone, A.D., Chang, R.K., Kneissl M., and Johnson, N.M., 2003, Unidirectional lasing from InGaN multiple-quantum-well spiral-shaped micropillars, Hpp/. Phys. Lett. 83(9) 1710-1712. 

Dimethylcadmium has found use as a volatile source of Cd for metal organic chemical vapor deposition (MOCVD) production of cadmium-containing semiconductor thin films (qv) such as CdS, Cdj Hg Te, or Cdj Mn Te, as multiple quantum well species (32). Semiconductor-grade material sells for... 

Indeed we study the two-dimensional systems in Section 5. In this section we will analyze the structural, electronic and, in particular, the optical properties of Si and Ge based nanofilms (Section 5.1), of Si superlattices and multiple quantum wells where CalQ and SiC>2 are the barrier mediums (Sections 5.2 and 5.3). The quantum confinement effect and the role of symmetry will be considered, changing the slab thickness and orientation, and also the role of interface O vacancies will be discussed. 

A phenomenon which is related to the PPC effects is the optical metastability in GaN. Optical metastability has been observed in GaN epilayers and InGaN/GaN multiple quantum wells [24-26]. Optical metastability in bulk GaN was manifested by a photoinduced decrease in the output intensity of the bandedge transition at 365 nm followed by an increase in the output intensity of a new emission band at 378 nm [25], The recovery time associated with the observed optical metastability is very long (weeks). The cause for such an effect was attributed to the presence of traps in bulk GaN [25], In... 

FIGURE 2 Bright-field transmission electron micrograph of a GalnN/GaN multiple quantum well structure exhibiting V-defects [12],... 

Narukawa et al [13] performed electro-reflectance (ER) studies of GalnN/GaN multiple quantum wells, obtaining a rich spectral structure, which was interpreted in terms of various excitonic features. Again, the main ER features are observed at energies which are distinctly higher than the dominating photoluminescence peak. 

For thick quantum wells (no significant quantisation) the shape of the optical gain spectra can be well described by a conventional band-to-band transition model [10], At least qualitatively, the same is true for thinner single and multiple quantum wells. However, the shape of the gain spectra alone cannot be used to decide on the transition mechanism. 

Nanocomposites in the form of superlattice structures have been fabricated with metallic, " semiconductor,and ceramic materials " " for semiconductor-based devices. " The material is abruptly modulated with respect to composition and/or structure. Semiconductor superlattice devices are usually multiple quantum structures, in which nanometer-scale layers of a lower band gap material such as GaAs are sandwiched between layers of a larger band gap material such as GaAlAs. " Quantum effects such as enhanced carrier mobility (two-dimensional electron gas) and bound states in the optical absorption spectrum, and nonlinear optical effects, such as intensity-dependent refractive indices, have been observed in nanomodulated semiconductor multiple quantum wells. " Examples of devices based on these structures include fast optical switches, high electron mobility transistors, and quantum well lasers. " Room-temperature electrochemical... 

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