Molecular beam temperatures

Several instniments have been developed for measuring kinetics at temperatures below that of liquid nitrogen [81]. Liquid helium cooled drift tubes and ion traps have been employed, but this apparatus is of limited use since most gases freeze at temperatures below about 80 K. Molecules can be maintained in the gas phase at low temperatures in a free jet expansion. The CRESU apparatus (acronym for the French translation of reaction kinetics at supersonic conditions) uses a Laval nozzle expansion to obtain temperatures of 8-160 K. The merged ion beam and molecular beam apparatus are described above. These teclmiques have provided important infonnation on reactions pertinent to interstellar-cloud chemistry as well as the temperature dependence of reactions in a regime not otherwise accessible. In particular, infonnation on ion-molecule collision rates as a ftmction of temperature has proven valuable m refining theoretical calculations. 

Molecular beam sample introduction (described in section (Bl.7.2)). followed by the orthogonal extraction of ions, results in improved resolution in TOP instruments over eflfrisive sources. The particles in the molecular beam typically have translational temperatures orthogonal to the beam path of only a few Kelvin. Thus, there is less concern with both the initial velocity of the ions once they are generated and with where in the ion source they are fonned (since the particles are originally confined to the beam path). 

Similar considerations have been exploited for the systematic analysis of room-temperature and molecular-beam IR spectra in temis of intramolecular vibrational relaxation rates [33, 34, 92, 94] (see also chapter A3.13 V... 

Molecular beam epitaxy is a non-CVD epitaxial process that deposits silicon through evaporation. MBE is becoming more common as commercial equipment becomes available. In essence, silicon is heated to moderate temperature by an electron beam in a high vacuum... 

Electrical Properties. Generally, deposited thin films have an electrical resistivity that is higher than that of the bulk material. This is often the result of the lower density and high surface-to-volume ratio in the film. In semiconductor films, the electron mobiHty and lifetime can be affected by the point defect concentration, which also affects electromigration. These effects are eliminated by depositing the film at low rates, high temperatures, and under very controUed conditions, such as are found in molecular beam epitaxy and vapor-phase epitaxy. 

S. Muthuvenkatranian, S. Gorantla, R. Venkat, D. L. Dorsey. Theoretical study of antisite arsenic incorporation in the low temperature molecular beam epitaxy of gallium arsenide. J App Phys S5 5845, 1998. 

The value of the magnetic hyperfine interaction constant C = 22.00 kHz is supposed to be reliably measured in the molecular beam method [71]. Experimental data for 15N2 are shown in Fig. 1.24, which depicts the density-dependence of T2 = (27tAv1/2)-1 at several temperatures. The fact that the dependences T2(p) are linear until 200 amagat proves that binary estimation of the rotational relaxation rate is valid within these limits and that Eq. (1.124) may be used to estimate cross-section oj from... 

The application of a selective pyrolysis process to the recovery of chemicals from waste PU foam is described. The reaction conditions are controlled so that target products can be collected directly from the waste stream in high yields. Molecular beam mass spectrometry is used in small-scale experiments to analyse the reaction products in real time, enabling the effects of process parameters such as temperature, catalysts and co-reagents to be quickly screened. Fixed bed and fluidised bed reactors are used to provide products for conventional chemical analysis to determine material balances and to test the concept under larger scale conditions. Results are presented for the recycling of PU foams from vehicle seats and refrigerators. 12 refs. 

Kamphus, M. et al., REMPI temperature measurement in molecular beam sampled low-pressure flames, Proc. Combust. Inst., 29,2627, 2002. 

Summarizing, it is possible to conclude that the technique of forming ultrasmall semiconductor particles turned out to be a powerful tool for building up single-electron junctions, even working at room temperature, as well as thin semiconductor layers and superlattices with structural features, reachable in the past only via molecular beam epitaxy. 

A pattern emerges when this molecular beam experiment is repeated for various gases at a common temperature Molecules with small masses move faster than those with large masses. Figure 5 shows this for H2, CH4, and CO2. Of these molecules, H2 has the smallest mass and CO2 the largest. The vertical line drawn for each gas shows the speed at which the distribution reaches its maximum height. More molecules have this speed than any other, so this is the most probable speed for molecules of that gas. The most probable speed for a molecule of hydrogen at 300 K is 1.57 X 10 m/s, which is 3.41 X 10 mi/hr. 

Figure 3a. CO2 evolution from the reaction of a molecular beam of CO with oxygen predosed onto Rh(l 10) to a coverage of 0.7 monolayers at a crystal temperature of 540 K, showing low reactivity at high oxygen coverage.

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