Transistor, thin film channel conductance

FIG. 6.2. Field-induced conductance of the a-6T thin film transistor as a function of gate source voltage for different thicknesses. The channel length of this transistor is 12 gm and the drain source voltage is —100 V [155],... 

As discussed above, the driver for many printed electronics applications is the printed transistor. The printed transistor is essentially a thin film transistor fabricated using printable materials. In other words, in its ultimate implementation, all three major material components of the printed transistor, i.e., the conductive electrodes, the insulating gate dielectric, and the semiconducting channel material, are printed. 

ZnO transparent thin-film transistors (TTFTs) are a very recent development. " The focus of this article is elucidation of channel mobihty and output conductance. Although these device physics issues are important for the development of TTFTs, they are also of relevance for other types of inorganic or organic TFTs. 

The typical a-Si H thin film transistor (TFT) is a field-effect device, shown schematically in Figure 8.13. The electrodes are patterned on a glass substrate and the gate is covered by a dielectric, usually Si3N4. The active a-Si H layer is added on top of the dielectric and the device is finished with source and drain electrodes. Application of a bias voltage to the gate controls channel conductivity as usual in field-effect transistors. These switch power onto and off of electrodes in displays quickly and efficiently. 

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