Metal-oxide-semiconductor technology gate oxides

Roy PK, Kizilyalli IC (1998) Stacked high-gate dielectric for gigascale integration of metal-oxide-semiconductor technologies. Appl Phys Lett 72 2835. 

Plasma etching is widely used in semiconductor device manufacturing to etch patterns in thin layers of polycrystaUine siUcon often used for metal oxide semiconductor (MOS) device gates and interconnects (see Plasma TECHNOLOGY). 

Schorner, R., et al., Enhanced Channel Mobility of 4H-SiC Metal-Oxide-Semiconductor Transistors Fabricated with Standard Polycrystalline Silicon Technology and Gate-Oxide Nitridation, Applied Physics Letters, Vol. 80, No. 22, June 3, 2002, p. 176. 

Some metallic silicides have played an important role in the development of the microelectronics industry, such as PtSi, and several others are used in complementary metal oxide semiconductor (CMOS) technologies, notably TiSi2,CoSi2 and NiSi, providing ohmic contact, interconnect, gate, and diffusion barriers because of their excellent conductivity and their overall compatibility with Si technology. 

Gate oxide dielectrics are a cmcial element in the down-scaling of n- and -channel metal-oxide semiconductor field-effect transistors (MOSEETs) in CMOS technology. Ultrathin dielectric films are required, and the 12.0-nm thick layers are expected to shrink to 6.0 nm by the year 2000 (2). Gate dielectrics have been made by growing thermal oxides, whereas development has turned to the use of oxide/nitride/oxide (ONO) sandwich stmctures, or to oxynitrides, SiO N. Oxynitrides are formed by growing thermal oxides in the presence of a nitrogen source such as ammonia or nitrous oxide, N2O. Oxidation and nitridation are also performed in rapid thermal processors (RTP), which reduce the temperature exposure of a substrate. 

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