Memory applications

Lithium CFj. The Li/CF rbattery consists of a lithium anode, polycarbon monofluoride cathode, and microporous polypropylene separator saturated with organic electrolyte. These batteries are used as power sources for watches, portable calculators, memory applications, and so on. 

Lai YS, Tu CH, Kwong DL, Chen JS (2005) Bistable resistance switching of poly(N-vinylcarbazole) films for nonvolatile memory applications. Appl Phys Lett 87 (12) 122101-122103... 

Snodgrass J, Corwin J Pragmatics of recognition memory application to dementia and amnesia. J Exp Psychol Gen 117 34-50, 1988 Snyder F The dynamic aspects of sleep disturbances in relation to mental illness. Biol Psychiatry 1 119-130, 1969... 

Current research aims at high efficiency PHB materials with both the high speed recording and high recording density that are required for future memory applications. To achieve this aim, donor—acceptor electron transfer (DA-ET) as the hole formation reaction is adopted (177). Novel PHB materials have been developed in which spectral holes can be burnt on sub- or nanosecond time scales in some D-A combinations (178). The type of hole formation can be controlled and changed between the one-photon type and the photon-gated two-photon type (179). 

Lu, X.B., and J.Y. Dai. Memory Effects of Carbon Nanotubes as Charge Storage Nodes for Floating Gate Memory Applications. Applied Physics Letters 88 (2006) 113104. 

An alternative structure that has also been widely investigated both for high temperature piezoelectric, as well as for ferroelectric memory applications is the bismuth layer structure family as shown in Figure 1.14 for SrBi2Ta209 (sbt), e.g. [8], The structure consists of perovskite layers of different thicknesses, separated by Bi20 + layers. It has been shown that when the perovskite block is an even number of octahedra thick, the symmetry imposes a restriction on the polarization direction, confining it to the a-b plane. In contrast, when the perovskite block is an odd number of octahedra thick, it is possible to develop a component of the polarization along the c axis (nearly perpendicular to the layers). This could be used in... 

M. Grossmann, Imprint An Important Failure Mechanism of Ferroelectric Thin Films in View of Memory Applications. Dissertation. RWTH-Aachen, 2001. published by vdi Verlag, Fortschritt-Berichte vdi Reihe 9 Elektronik/Mikro- und Nanotechnik. 

Furthermore this method can be applied to fast pulse measurements, which are also of great interest in view of memory applications. An example is shown in Figure 17.17. This method can also be applied as small signal measurements on small structures, e.g. C(V) measurements on sub-micron capacitors, and is of great interest to gain further insight in ferroelectric behavior in the nano-scale [12], [13],... 

There are two main approaches or configurations for the AFM-assisted detection of the local piezoelectric activity (pfm) in ferroelectric thin films for ferroelectric memory applications (FeRAM). The most used one was introduced in the early 90s and uses a conductive afm-tip as both top electrode and sensor for the induced vibration [2-4]. The second and more recent one [15,16], uses a normal metallic thin top electrode to apply the electric field and the vibration signal is detected by the AFM-tip above the top electrode. Both approaches present numerous advantages and disadvantages, as widely discussed in the literature, and are quite complementary. 

Rare earth substituted garnet films for magnetic bubble memory applications... 

Ferroelectrics are high dielectric materials that are easily polarized in an electric field and can remain polarized to some degree after the field is removed. Such properties make them ideal candidates for computer memory applications and they have been used in the form of thin films as ferroelectric random access memories (FeRAMs) and as high permittivity dielectrics for Dynamic Random Access Memory DRAMs. They have also been looked at as a replacement for silicon dioxide in certain MOS applications. 

The initial Performance window has two options application response and virtual memory. Application response is normally not something you will need to modify. It is set by default to optimize the system for foreground applications, making the system most responsive to the user who is running programs. This is generally best, but it does mean that any applications (databases, network services, etc.) that are run by the system are given less time by the system. 

Dalton LR, Harper AW (1996) Photoactive organic materials for electro-optic modulator and high density optical memory applications. In Kajzar E, Agranovich VM, Lee CYC (eds) Photoactive organic materials science and application. NATO ASI Series, vol 9, Kluwer Academic, Dordrecht, p 183... 

As an example for depth profiling of interfaces, an XPS investigation of the ferroelectric copolymer P(VDF-TrFE) is presented. For a memory application, low operation voltages and a downscaling of the film thickness are necessary. For thin films of the copolymer, interface phenomena become important. We compare the two interfaces P(VDF-TrFE)/Al and P(VDF-TrFE)/PEDOT PSS. For the organic electrode, a better functionality of P(VDF-TrFE) is reported, as described above. 

Chemical and physical processing techniques for ferroelectric thin films have undergone explosive advancement in the past few years (see Ref. 1, for example). The use of PZT (PbZri- cTi c03) family ferroelectrics in the nonvolatile and dynamic random access memory applications present potentially large markets [2]. Other thin-film devices based on a wide variety of ferroelectrics have also been explored. These include multilayer thin-film capacitors [3], piezoelectric or electroacoustic transducer and piezoelectric actuators [4-6], piezoelectric ultrasonic micromotors [7], high-frequency surface acoustic devices [8,9], pyroelectric intrared (IR) detectors [10-12], ferroelectric/photoconduc-tive displays [13], electrooptic waveguide devices or optical modulators [14], and ferroelectric gate and metal/insulator/semiconductor transistor (MIST) devices [15,16]. 

The garnet ferrites are the basis of materials for many high-technology devices for magnetooptical, microwave and memory applications. These ferrites have thus been extensively studied as ceramics, single crystals, thin and epitaxial films, etc. The prototype, yttrium iron garnet or YIG has also been used for many fundamental studies. 

---