Big Chemical Encyclopedia

Chemical substances, components, reactions, process design ...

Articles Figures Tables About

Floating gate

Fig. 1. Schematic of (a) conventional continuous floating gate CMOS memory and (b) nanocrystal CMOS memory. Discrete charge storage in nanocrystal memories reduces the possibility of charge loss through defects in the underlying tunnel dielectric. = floating gate = defect in tunnel oxide... Fig. 1. Schematic of (a) conventional continuous floating gate CMOS memory and (b) nanocrystal CMOS memory. Discrete charge storage in nanocrystal memories reduces the possibility of charge loss through defects in the underlying tunnel dielectric. = floating gate = defect in tunnel oxide...
Figure 11.17. Three-dimensional multifunctional circuits on plastics, (a) Schematics and circuit diagrams of inverter (top) and floating gate memory (bottom) elements. Figure 11.17. Three-dimensional multifunctional circuits on plastics, (a) Schematics and circuit diagrams of inverter (top) and floating gate memory (bottom) elements.
Lu, X.B., and J.Y. Dai. Memory Effects of Carbon Nanotubes as Charge Storage Nodes for Floating Gate Memory Applications. Applied Physics Letters 88 (2006) 113104. [Pg.106]

When a high resolution mode is required, first switches 22 are closed so as to ground the enclosure regions 13 and second switches 23 are opened so as to float gate electrodes 15. Carriers generated in the vicinity of the enclosure regions are attracted and absorbed by the junction potential of the enclosure regions. Thus, no carriers flow into adjacent photodiodes. [Pg.186]

Polysilicon floating gate (underneath the control gate, nonvolatile storage application). [Pg.521]

Fig. 15. Pixel circuit considering parasitic capacitances and substrate cap>acitances. The size of switching and driving TFT is 22/5 /an and 200/5 jMH, respectively. Node A means the floating gate electrode of the driving TFT. Fig. 15. Pixel circuit considering parasitic capacitances and substrate cap>acitances. The size of switching and driving TFT is 22/5 /an and 200/5 jMH, respectively. Node A means the floating gate electrode of the driving TFT.
Fig. 16. Lay-out of one pixel and simulation parameters to get the voltage at the floating gate electrode by the substrate bias... Fig. 16. Lay-out of one pixel and simulation parameters to get the voltage at the floating gate electrode by the substrate bias...
Kahng and S.M. Sze, A floating gate and its application to memory devices, Bell Syst. Tech. J. 46, 1283 (1967). [Pg.150]

Fig. 6.6. Structure of an ion-sensitive organic field-effect floating gate device for chemical sensing [7]. Copyright 2006 IEEE... Fig. 6.6. Structure of an ion-sensitive organic field-effect floating gate device for chemical sensing [7]. Copyright 2006 IEEE...

See other pages where Floating gate is mentioned: [Pg.354]    [Pg.354]    [Pg.71]    [Pg.74]    [Pg.212]    [Pg.213]    [Pg.371]    [Pg.371]    [Pg.354]    [Pg.354]    [Pg.167]    [Pg.168]    [Pg.168]    [Pg.168]    [Pg.171]    [Pg.42]    [Pg.255]    [Pg.167]    [Pg.167]    [Pg.168]    [Pg.175]    [Pg.437]    [Pg.438]    [Pg.313]    [Pg.440]    [Pg.150]    [Pg.150]    [Pg.192]    [Pg.189]    [Pg.9]    [Pg.130]    [Pg.131]    [Pg.131]    [Pg.132]    [Pg.133]    [Pg.133]    [Pg.133]    [Pg.133]   
See also in sourсe #XX -- [ Pg.150 ]




SEARCH



Float

Floating

© 2024 chempedia.info