Material characterization methods electron microscopy

In the author s opinion, the better approach to experimentally study the morphology of the silica surface is with the help of physical adsorption (see Chapter 6). Then, with the obtained, adsorption data, some well-defined parameters can be calculated, such as surface area, pore volume, and pore size distribution. This line of attack (see Chapter 4) should be complemented with a study of the morphology of these materials by scanning electron microscopy (SEM), transmission electron microscopy (TEM), scanning probe microscopy (SPM), or atomic force microscopy (AFM), and the characterization of their molecular and supramolecular structure by Fourier transform infrared (FTIR) spectrometry, nuclear magnetic resonance (NMR) spectrometry, thermal methods, and possibly with other methodologies. 

Both optical and electron microscopies are widely used to characterize pharmaceutical solids. Optical microscopy is limited to the range of magnification suitable for routine work, that is, an approximate upper limit of 600 X. However, this magnification limit does not preclude the investigation of most pharmaceutical materials, and the use of polarizing optics introduces a power into the technique that is not available with other methods. Electron microscopy work can be performed at extraordinarily high magnification lev-... 

A powerful method of examining the morphology of many multicomponent polymer materials utilizes transmission electron microscopy [Woodward, 1989]. If the two phases are nearly equal in electron density, staining with osmium tetroxide or other agents can be used. For more detailed discussion on the methods of morphology characterization, see Chapter 8. 

Materials characterization techniques, ie, atomic and molecular identification and analysis, ate discussed ia articles the tides of which, for the most part, are descriptive of the analytical method. For example, both iaftared (it) and near iaftared analysis (nira) are described ia Infrared and raman SPECTROSCOPY. Nucleai magaetic resoaance (nmr) and electron spia resonance (esr) are discussed ia Magnetic spin resonance. Ultraviolet (uv) and visible (vis), absorption and emission, as well as Raman spectroscopy, circular dichroism (cd), etc are discussed ia Spectroscopy (see also Chemiluminescence Electho-analytical techniques It unoassay Mass specthot thy Microscopy Microwave technology Plasma technology and X-ray technology). 

One problem with methods that produce polycrystalline or nanocrystalline material is that it is not feasible to characterize electrically dopants in such materials by the traditional four-point-probe contacts needed for Hall measurements. Other characterization methods such as optical absorption, photoluminescence (PL), Raman, X-ray and electron diffraction, X-ray rocking-curve widths to assess crystalline quality, secondary ion mass spectrometry (SIMS), scanning or transmission electron microscopy (SEM and TEM), cathodolumi-nescence (CL), and wet-chemical etching provide valuable information, but do not directly yield carrier concentrations. 

Although a number of secondary minerals have been predicted to form in weathered CCB materials, few have been positively identified by physical characterization methods. Secondary phases in CCB materials may be difficult or impossible to characterize due to their low abundance and small particle size. Conventional mineral identification methods such as X-ray diffraction (XRD) analysis fail to identify secondary phases that are less than 1-5% by weight of the CCB or are X-ray amorphous. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM), coupled with energy dispersive spectroscopy (EDS), can often identify phases not seen by XRD. Additional analytical methods used to characterize trace secondary phases include infrared (IR) spectroscopy, electron microprobe (EMP) analysis, differential thermal analysis (DTA), and various synchrotron radiation techniques (e.g., micro-XRD, X-ray absorption near-eidge spectroscopy [XANES], X-ray absorption fine-structure [XAFSJ). 

The most frequently applied analytical methods used for characterizing bulk and layered systems (wafers and layers for microelectronics see the example in the schematic on the right-hand side) are summarized in Figure 9.4. Besides mass spectrometric techniques there are a multitude of alternative powerful analytical techniques for characterizing such multi-layered systems. The analytical methods used for determining trace and ultratrace elements in, for example, high purity materials for microelectronic applications include AAS (atomic absorption spectrometry), XRF (X-ray fluorescence analysis), ICP-OES (optical emission spectroscopy with inductively coupled plasma), NAA (neutron activation analysis) and others. For the characterization of layered systems or for the determination of surface contamination, XPS (X-ray photon electron spectroscopy), SEM-EDX (secondary electron microscopy combined with energy disperse X-ray analysis) and... 

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