Loading effects process

An analysis (55) of the loading effect, which has been extended (59) to include multiple etchant loading and other etchant loss processes, indicates that the etch rate (R) for N wafers each of area A is given by... 

The simple scrubber process is very efficient to eliminate slurries but does not remove the metallic contamination or the damaged layer. The simplest additional process is to use an HF-based step which removes both of them. The use of an HF-compatible scrubber saves an additional wet bench with a dryer and a wafer transfer. The chemistries used must avoid loading effects. 

Si02 slurries are quite easy to remove and do not produce any brush-loading effect since the commercial slurry used does not contain too many foreign particles. The simplest scrubber process consists in a... 

A characteristic of the plasma etching process which is generally observed is that the etch rate of a sample decreases as the area of the sample exposed to the plasma increases This dependence of etch rate on batch size is referred to as the loading effect and an example is shown in Fig. 3.8. The reason for the loading effect is simply that the etching process consumes a significant fraction of the... 

Clearly, the existence of a loading effect is not desirable in a manufacturing process. However, it is not obvious that the effect can be eliminated without... 

The usual situation, however, is that current is drawn from the element to operate a recorder and/or some further element within a control system. Under these conditions the relation between the displacement x of the contact (i.e. the change in process pressure) and V0 will be non-linear due to loading effects (Section 6.11.6) unless the resistance of the load RL is much greater than that of the potentiometer... 

Most isotropic etchants exhibit a loading effect, wherein a measurable depletion of the active etchant results from consumption in the etch process. In these cases, the overall etch rate depends upon the area of film to be etched. Under extreme circumstances, with carbon-based etch gases, etchant depletion can be so severe that polymer deposition occurs instead of etching. An analysis (85) of the loading effect, which has been extended (86) to include multiple etchant loading and other etchant loss processes, indicates that the etch rate (R) for N wafers each of area A is given by... 

The F/C ratio model accounts for the fact that for carbon-containing gases etching and polymerization occur simultaneously. The process that dominates depends upon etch gas stoichiometry, reactive-gas additions, amount of material to be etched, and electrode potential and upon how these factors affect the F/C ratio. For instance, as described in Figure 8, the F/ C ratio of the etchant gas determines whether etching or polymerization is favored. If the primary etchant species for silicon (F atoms) is consumed either by a loading effect or by reaction with hydrogen to form HF, the F/... 

Large industrial cooling systems and those with high organic loading or process contamination require high ozone dose rates and several application points. This approach is unlikely to be cost-effective. 

In analogy to the discussion of the loading step processes, both the processes occurring in the curing step and the effect of substrate structure on these processes will be discussed. Whereas the study of the loading step processes involved analysis of the solvent, here the modified substrate is studied. For this, various spectroscopic techniques are applied. The discussion is focused on the silicon side of the aminosilane molecule. The interactions at the amine side will be discussed in the next paragraph. 

While the effect of concentration is qualitatively evident, it is essential for purposes of engineering design and operation of adsorption processes that rather precise prediction of concentration or load effect be possible. Previous findings relative to the concentration dependence of... 

Loading effects At the end of the etch back process two mechanisms (so called loading effects [van Laarhoven et al.61, Berthold et al.62]) can dramatically increase the etch rate of the plugs in the contacts ... 

Process Validation (Biological) Biological validation is the most critical element of process validation of ethylene oxide sterilization. It is the only method of integrating the interaction of gas concentration, humidity, temperature. time, sterilizer effects, load effects, etc. It must demonstrate that the SAL being obtained is no worse than tOA and it must de nonstrate uniformity of treatment and it must provide the basis for routine monitoring. It is the only guarantee that the specifications for product and for process achieve sterility. Some preliminary work done in laboratory-scale sterilizers may provide favor-... 

When the flow rates vary considerably in the batteries due to loading effects, the whole calculatiomd procedure becomes recursive and a computer code based on these equations may be needed. However, in most cases it is only necessary to treat one, or perhaps two, of the extracted conqx>nents recursively as it dominates volume changes and defines the P-values for all minor componrats, e.g. in the high active first stage in the Purex process nitric acid and uranium define the flow rates and extraction factors for all other elements. 

The data given in the paper on HDPE macromolecular dispersion based on rubbing conditions allow a conclusion that the degree of dispersion depends mainly on load. Effect of velocity on this process is indirect and related to the transfer mode or to the ratio of the metal-polymer and polymer-polymer contact areas. If the metal—polymer contact area is predominant this leads to intensification of macromolecular dispersion. 

As stated in a preceding section, physical aging starts when a polymer is quenched to a temperature below its T, irrespective of the mechanical loading on the material. Therefore, when a sub-Tg polymer is subjected to mechanical load, two processes occur simultaneously (1) physical aging and (2) stress relaxation or creep associated with mechanical load or deformation. Each of these processes has its own unique time and temperature dependence and hence, both effects must be accounted for in the long... 

Other hand, with increasing size of the plastic zone the value of 6 approaches the average deformability (5 of the preceding stages of the penetration process, and the degree of the load effect decreases. As a consequence, the hardness approaches an asymptotic value at larger testing loads. 

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