Etch gases

The dry etch resistance of P(MI-VBC) was compared with that for several commercial resists using a variety of etch gases (02, SFg, and CF4) under RIE conditions. The etch rate data given in Table V are presented as the ratio of the resist etch rate relative... 

Most isotropic etchants exhibit a loading effect, wherein a measurable depletion of the active etchant results from consumption in the etch process. In these cases, the overall etch rate depends upon the area of film to be etched. Under extreme circumstances, with carbon-based etch gases, etchant depletion can be so severe that polymer deposition occurs instead of etching. An analysis (85) of the loading effect, which has been extended (86) to include multiple etchant loading and other etchant loss processes, indicates that the etch rate (R) for N wafers each of area A is given by... 

Table IV. Etch Gases Used for Various 1C Film Materials...

Y. Yoshida, Japan s Research on Alternative Etching Gases, Proceedings of the Global Semiconductor Industry Conference on Perfluorocompound Emissions Control, Monterey, CA, 1998. 

Perfluorocarbons are plasma-etching gases used in the microelectronics industry, and are less likely to polymerize in glow discharge than the hydrocarbon counterparts, unless a double bond or a cyclic structure exists in the molecule. Some factors that... 

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