Lithography transistors

L First manufacturing use of chemically amplified resists Plasma-developed resist first described X-ray proximity lithography demonstrated Bis-azide rubber resists introduced DNO-novolac resist for microelectronics introduced Photoresist technology first applied to transistor fabrication DNO-novolac resist patented by Kalle... 

Electronics Production of circuit boards (producing contacts in boreholes), modified electrolytic condensers, modified field effect transistors, molecular electronics (unidirectional conductors), photostructural lacquers based on ICPs (electron beam lithography), novel photoluminescent diodes (LED), data storage (e.g. spatially resolved eleclrochromics)... 

On detailed electrical characteristics of a SET transistor utilizing charging effects on metal nanoclusters were reported by Sato et al. [26]. A self-assembled chain of colloidal gold nanoparticles was connected to metal electrodes, which were formed by electron-beam lithography. The cross-linking of the particles as well as their connection to the electrodes results from a linkage by bifunctional organic molecules, which present the tunnel barriers. 

The continued downscaling of transistor sizes is essential to the continuation of Moore s law. Lithography has always been a limiting factor. Optical lithography is limited by the optical resolution... 

Before the invention of the planar transistor, many photoresist processes were developed for the manufacture of circuit boards. Experience gained in this area was rapidly transferred to silicon processing, and much of the early work in integrated circuit lithography can be traced directly to circuit board manufacturing. 

Thin-film Transistor Fabrication by Digital Lithography... 

As a first demonstration of the fabrication of TFT devices by digital lithography, tri-layer insulated-gate thin-film transistors were fabricated on four-inch glass substrates using a three-layer wax-mask process. Mask layers were used to define the... 

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