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Laser etching

Co Ultra fine particle Laser etching of Co thin film 1000 Triazine 26... [Pg.6]

Figure 5.21. SEM micrographs of laser-etched PTFE doped with polyimide and neat polyimide. Polyimide concentration in samples are 0.5% (a), 1.0% (b), 5.0% (c) 100% (d), and 5.0% (at 45°) (e). Fluence was 12 J/cm2 at 308 nm (a-d from Egitto and Davis5 7 and e from Davis et al. 72). (Reduced 50% for reproduction). Figure 5.21. SEM micrographs of laser-etched PTFE doped with polyimide and neat polyimide. Polyimide concentration in samples are 0.5% (a), 1.0% (b), 5.0% (c) 100% (d), and 5.0% (at 45°) (e). Fluence was 12 J/cm2 at 308 nm (a-d from Egitto and Davis5 7 and e from Davis et al. 72). (Reduced 50% for reproduction).
Laser Etching (Printing) None Identified Lumonics... [Pg.442]

Although laser etching systems may differ from one another, no laser etching subclasses have been identified. [Pg.445]

Unique Process Requirements. The fabrication of TFML interconnections involves a repetitive sequence of thin-film processes to deposit and pattern conductor and dielectric layers. Many processes used in IC fabrication, such as vacuum deposition of metals, photolithography, wet and dry etching, and newly emerging processes (such as laser etching and deposition), may be used in the fabrication of TFML interconnections. However, the geometries and substrates required for packaging impose a number of unique requirements on conventional thin-film processes. [Pg.488]

Kilbey, G., Karousos, N. G., Eglin, D. and Davis, J. (2006), Laser etched carbon fibre composites Disposable detectors for flow analysis applications. Electrochem. Commun., 8(8) 1315-1320. [Pg.91]

Fig. 16. Schematic representation of galvanic element formation due to laser etching. Fig. 16. Schematic representation of galvanic element formation due to laser etching.
Results on laser-etching obtained by other investigators confirm the model of a corroding galvanic cell (see, e.g., ref. [89]). This model also explains the large discrepancies in the photoetching rates that are often observed between different experiments these rates are indeed dependent on experimental parameters, such as the ratio of dark to illuminated surface area, coverage or exposure of the rear surface, etc. [87]. [Pg.37]

CO2 laser) etch Si0 2 on Si(lll), both processes occurring via SiF formation [974a]. Fluorine atoms (generated by ArF laser photolysis of COFj) also form a very effective etchant for polycrystalline silica deposited on Si0 2 [1273a]. Finally, COFj and fluorine atoms are both generated in a CF -NO plasma [1775]. [Pg.633]

Hosokawa, Y., Yashiro, M., Asahi, T. and Masuhara, H. (2001) Photothermal conversion dynamics in femtosecond and picosecond discrete laser etching of Cu-phfhalocyanine amorphous film analysed by ultrafast UV-VIS absorption spectroscopy. J. Photochem. Photobiol., A, 142, 197-207. [Pg.285]

In simple cases but ones that are important for practical applications, the theory of laser etching yields an analytical expression for the characteristics of the relief produced as a function... [Pg.240]


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Etching, ultraviolet laser

Laser Ablation Resists (Dry Etching)

Laser assisted etching

Laser induced etching

Pulsed laser etching, thin films

Semiconductors laser etching

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