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Influence of Defects

As mentioned above, the interpretation of CL cannot be unified under a simple law, and one of the fundamental difficulties involved in luminescence analysis is the lack of information on the competing nonradiative processes present in the material. In addition, the influence of defects, the surface, and various external perturbations (such as temperature, electric field, and stress) have to be taken into account in quantitative CL analysis. All these make the quantification of CL intensities difficult. Correlations between dopant concentrations and such band-shape parameters as the peak energy and the half-width of the CL emission currently are more reliable as means for the quantitative analysis of the carrier concentration. [Pg.154]

It is apparent, from the above short survey, that kinetic studies have been restricted to the decomposition of a relatively few coordination compounds and some are largely qualitative or semi-quantitative in character. Estimations of thermal stabilities, or sometimes the relative stabilities within sequences of related salts, are often made for consideration within a wider context of the structures and/or properties of coordination compounds. However, it cannot be expected that the uncritical acceptance of such parameters as the decomposition temperature, the activation energy, and/or the reaction enthalpy will necessarily give information of fundamental significance. There is always uncertainty in the reliability of kinetic information obtained from non-isothermal measurements. Concepts derived from studies of homogeneous reactions of coordination compounds have often been transferred, sometimes without examination of possible implications, to the interpretation of heterogeneous behaviour. Important characteristic features of heterogeneous rate processes, such as the influence of defects and other types of imperfection, have not been accorded sufficient attention. [Pg.239]

At present, intercalation compounds are used widely in various electrochemical devices (batteries, fuel cells, electrochromic devices, etc.). At the same time, many fundamental problems in this field do not yet have an explanation (e.g., the influence of ion solvation, the influence of defects in the host structure and/or in the host stoichiometry on the kinetic and thermodynamic properties of intercalation compounds). Optimization of the host stoichiometry of high-voltage intercalation compounds into oxide host materials is of prime importance for their practical application. Intercalation processes into organic polymer host materials are discussed in Chapter 26. [Pg.448]

Over the past decade or so, our understanding of oxide surfaces has markedly improved, especially in the case of the model oxide surface-Ti02(l 10). In particular, the influence of defects such as oxygen vacancies on the surface reactivity has been demonstrated in exquisite detail and it is clear that they play a crucial role in many surface reactions. As we have shown in this chapter, scanning probes have been instrumental in evaluating the surface reactivity as they allow individual defects, reactants, and products to be imaged on relatively short timescales (seconds or minutes). [Pg.236]

One of the most significant results from the advent of these surface science studies on oxides relevant for the present catalytic applications is the fact that oxides can be multiply terminated and that they are not terminated [154, 180, 186-190] in cuts through the bulk structure. This is not unexpected in general [98,156,179] but it is of great value to know this in attempts to understand the mechanisms that activate oxides for catalysis. These rigorous studies must be differentiated from more empirical studies carried out on termination issue with qualitative methods and without predictive power but with the still invaluable advantage that they can be applied [97,191-193] to complex MMO catalyst systems. Such studies can be used to probe the surface reactivity, to address the issue of segregation of, for example, vanadium out of an MMO system and to compare different qualities of the nominally same material with speculative assumptions about the influence of defects. [Pg.21]

Excitation by impinging electrons (or ions) takes place by a somewhat different mechanism. Energetic electrons penetrate the phosphor grains and the lose energy by multiple collision processes. The energy is sufficient to pump the conduction band of the phosphor host and the excitation can move anywhere in the crystal to pump the localized luminescence centers. Cathodoluminescence thus appears at lower concentration thresholds than photoluminescence but is more susceptible to the influence of defects and other luminescence poisons. [Pg.125]

The attempt of systematic theoretical investigation of the influence of defects on geometrical configuration and electronic structure of carbon zigzag and armchair nanotubes is undertaken. [Pg.795]

In this entry, the principal chemical features of defect populations (defect chemistry) will be described from the restricted viewpoint of crystalline inorganic solids. The influence of defects upon mechanical properties will be excluded and defects that may have greatest relevance to physical properties will be treated from the point of view of chemical importance. Defects in molecular crystals and amorphous and glassy solids will be omitted see Noncrystalline Solids), as will the important areas of alloys see Alloys), thin films see Thin Film Synthesis of Solids), and carbon nanotubes and related nanoparticles see Carbon Fullerenes). References to the literature before 1994 are to be found in the corresponding article in the first edition of this Encyclopedia. ... [Pg.1073]

The quantitative evaluation of defects is a well defined but hard to tackle problem for future studies that has to be taken on by our research community. Water adsorption is an example that lends itself to a study of the influence of defects, because at lower coverage the (100) cleavage planes of MgO and NiO do not dissociate water, while the presence of defects does induce water dissociation. [Pg.338]

The implantation method will always be superior when very thin protective surface layers are needed or if one wants to form alloys for which low solubility limits forbid the use of conventional techniques. The work done until now has shown that implantation is a very good method to do basic research in the field of corrosion and oxidation. The fact of allowing every possible combination of surface alloys and a very low and controlled concentration of impurities as well as studying the influence of defects is unique. Therefore, this method should play a more and more important role in corrosion science in the future. [Pg.80]

Investigations of Pb on the stepped surfaces of Cu provide a systematic way to study the influence of defects on the statics and d5mamics of overlayer formation. Stepped surfaces are also interesting in that the observed phenomena (self-assembly, phase transitions, etc.) have a one-dimensional character to them. Although studied less extensively than the flat surfaces, LEED/AES and SPA-LEED studies have been reported for the adsorption of Pb on the (211), (311), (511), (711) (510), and (10,10) planes of Cu. [Pg.175]

M. Martin and R. Schmackpfeffer, Demixing of oxides influence of defect interactions. Solid State Ionics, 72 (1994) 67-71. [Pg.528]

Influence of Defects including impurities have a major influence on the electrical properties of nonmetallic defects solids. They can provide extra electrons or holes, which enhance semiconduction, and they can also facilitate conduction by ions. [Pg.148]

Influence of proton irradiation and hydrogen passivation on the photoluminescence (PL) of MBE grown Ge/Si quantum dots (QDs) has been studied. An enhanced resistance of the QDs against irradiation as compared to the quantum wells and bulk silicon has been found. The passivation improves the thermal stability of the QD luminescence whereas the irradiation reduces it. Various carrier/exciton redistribution processes among the PL centers and the influence of defects have been observed. [Pg.144]

One of the most controversial issues in the field of diffusion in zeohtes is the so-called window effect . This term was coined by Gorring to interpret the anomalous transport results obtained for hnear alkanes in zeoHte T [46], but his experimental conditions have been criticized. More recent macroscopic studies could not reproduce the periodic variation in diffusivity, and a monotonic decline with carbon number was reported [47,48]. However, a microscopic technique, such as neutron scattering, is better suited to probe anomalous diffusion mechanisms on a molecular scale, since it is much less sensitive to the influence of defects or internal transport barriers within the zeolite crystals. [Pg.230]

Activated adsorption is primarily found with dissociative adsorption as can be rationalized on the basis of Fig. 1.4. Adsorption in the molecular state, A2,ad (he., trapping), is sometimes denoted as "intrinsic" precursor from where the activation barrier for dissociation has to be surmounted. Usually at least two neighboring free adsorption sites are required for this process, so for random distribution of the adsorbates in the Langmuir picture the sticking coefficient is expected to vary with coverage as s =Sq(1 —5). Again, as with nondissociative adsorption, such a situation is found only in exceptional cases since usually various complications (such as the influence of defects or the need for more than two adjacent vacant sites, etc.) come into play. [Pg.13]

Kaiyakin A. A., Maltsev I. A, and Lukachova L. V., The influence of defects in potyaniline structure on its electroactivity Optimization of self-doped po niline synthesis,/ Electroanal Chem., 1996,402, 217-219. [Pg.270]

Ghavamian Ali, Ochsner Andreas. (2012). Numerical Investigation on the Influence of Defects on the Buckling Behavior of Single-and Multi-Walled Carbon Nanotubes. Physica E, 46, 241-249. [Pg.265]

Fig. 4.5. DSC studies of the influence of defects on phase transitions in (a) DjOUOjPO. SDjO (DUP), mixed (O.SHjO-O.SDjOUOiPO 1.5HjO-1.5DjO (D-HUP) and H3OUO2PO. 3H2O (HUP) the dotted line is obtained after quenching (b) CsHSO annealed at room temperature, a , after pressing, b , and grinding c (with permission, (c) H2Sb40ii. H20 with various amounts of water stoichiometry (with permission). Fig. 4.5. DSC studies of the influence of defects on phase transitions in (a) DjOUOjPO. SDjO (DUP), mixed (O.SHjO-O.SDjOUOiPO 1.5HjO-1.5DjO (D-HUP) and H3OUO2PO. 3H2O (HUP) the dotted line is obtained after quenching (b) CsHSO annealed at room temperature, a , after pressing, b , and grinding c (with permission, (c) H2Sb40ii. H20 with various amounts of water stoichiometry (with permission).
Water non-stoichiometry associated with the presence of P2O7 defects is also possible . Atmospheric humidity may also play a role as shown for RbH2P04 by Baranowski et al. The enthalpy of a phase transition (352 K) in RbH2P04 is directly related to the time of contact between the crystal (1-100 mm Hg) and the water vapour at various pressures. The mechanism is not well understood but the experimental evidence indicates the influence of defects. [Pg.170]


See other pages where Influence of Defects is mentioned: [Pg.502]    [Pg.272]    [Pg.5]    [Pg.305]    [Pg.548]    [Pg.443]    [Pg.121]    [Pg.100]    [Pg.131]    [Pg.132]    [Pg.397]    [Pg.48]    [Pg.300]    [Pg.266]    [Pg.145]    [Pg.570]    [Pg.144]    [Pg.150]    [Pg.145]    [Pg.48]    [Pg.707]    [Pg.713]    [Pg.715]    [Pg.140]    [Pg.127]    [Pg.214]    [Pg.2]   


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